Биполярный транзистор 2SC513 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC513
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Ёмкость коллекторного перехода (Cc): 40(max) pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO39
2SC513 Datasheet (PDF)
2sc5132.pdf
2SC5132ASilicon NPN Triple Diffused PlanarApplicationTO3PFM (N)Character display horizontal deflection outputFeatures High breakdown voltageVCES = 1500 V, IC = 8 A Builtin damper diode type Isolated packageCTO-3PFMB1. Base2. Collector13. Emitter23EAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
2sc5136.pdf
2SC5136Silicon NPN EpitaxialADE-208-2231st. EditionApplicationVHF/UHF wide band amplifierFeatures High gain bandwidth productfT = 3.8 GHz typ High gain, low noise figurePG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5136Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base v
2sc5138.pdf
2SC5138Silicon NPN EpitaxialADE-208-225A (Z)2nd. EditionMar. 2001ApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 6 GHz typ High gain, low noise figurePG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. CollectorNote: Marking is YL.Attention: This device is very sensitive to ele
2sc5139.pdf
2SC5139Silicon NPN EpitaxialADE-208-2261st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 11 GHz typ High gain, low noise figurePG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5139Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base
2sc5137.pdf
2SC5137Silicon NPN EpitaxialADE-208-2241st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 10 GHz typ High gain, low noise figurePG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHzOutlineSMPAK3121. Emitter2. Base3. Collector2SC5137Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to bas
2sc5130.pdf
2SC5130Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit0.24.20.210.1c0.5VCBO 600 V ICBO VCB=500V 100max A2.8
2sc5130.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050