2SC525R - описание и поиск аналогов

 8.1. Size:177K  toshiba
 2sc5254.pdf 

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1

 8.2. Size:180K  toshiba
 2sc5255.pdf 

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB (f = 2 GHz) High gain Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1

 8.3. Size:182K  toshiba
 2sc5259.pdf 

 8.4. Size:126K  toshiba
 2sc5257.pdf 

 8.5. Size:103K  toshiba
 2sc5258.pdf 

 8.6. Size:164K  toshiba
 2sc5256.pdf 

 8.7. Size:104K  toshiba
 2sc5256ft.pdf 

 8.8. Size:71K  hitachi
 2sc5250.pdf 

Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.fr

 8.9. Size:35K  hitachi
 2sc5251.pdf 

2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 sec (typ) Isolated package TO-3P FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Un

 8.10. Size:38K  hitachi
 2sc5252.pdf 

2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf 0.15 sec(typ.) Isolated package TO 3P FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25 C) Item Sym

 8.11. Size:1019K  kexin
 2sc5254.pdf 

SMD Type Transistors NPN Transistors 2SC5254 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.12. Size:1007K  kexin
 2sc5259.pdf 

SMD Type Transistors NPN Transistors 2SC5259 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=15mA 1 2 Collector Emitter Voltage VCEO=7V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.13. Size:188K  inchange semiconductor
 2sc5250.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5250 DESCRIPTION Silicon NPN diffused planar transistor High speed switching Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for display horizontal deflection output Switching regulator and general purpose AB

 8.14. Size:216K  inchange semiconductor
 2sc5252.pdf 

isc Silicon NPN Power Transistor 2SC5252 DESCRIPTION High speed switching High breakdown voltage VCBO = 1500 V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Vo