Справочник транзисторов. 2SC525R

 

Биполярный транзистор 2SC525R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC525R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 20 MHz
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO37

 Аналоги (замена) для 2SC525R

 

 

2SC525R Datasheet (PDF)

 8.1. Size:177K  toshiba
2sc5254.pdf

2SC525R
2SC525R

2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

 8.2. Size:180K  toshiba
2sc5255.pdf

2SC525R
2SC525R

2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 7 VEmitter-base voltage VEBO 1

 8.3. Size:182K  toshiba
2sc5259.pdf

2SC525R
2SC525R

 8.4. Size:126K  toshiba
2sc5257.pdf

2SC525R
2SC525R

 8.5. Size:103K  toshiba
2sc5258.pdf

2SC525R
2SC525R

 8.6. Size:164K  toshiba
2sc5256.pdf

2SC525R
2SC525R

 8.7. Size:104K  toshiba
2sc5256ft.pdf

2SC525R
2SC525R

 8.8. Size:71K  hitachi
2sc5250.pdf

2SC525R
2SC525R

Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective ManufacturerPrinted from www.fr

 8.9. Size:35K  hitachi
2sc5251.pdf

2SC525R
2SC525R

2SC5251Silicon NPN Triple Diffused PlanarPreliminaryApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.2 sec (typ) Isolated packageTO-3PFM (N)OutlineTO-3PFM (N)1. Base 2. Collector 3. Emitter1232SC5251Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Un

 8.10. Size:38K  hitachi
2sc5252.pdf

2SC525R
2SC525R

2SC5252Silicon NPN Triple Diffused PlanarADE-208-391A (Z)2nd. EditionApplicationCharacter display horizontal deflection outputFeatures High breakdown voltageVCBO = 1500 V High speed switchingtf 0.15 sec(typ.) Isolated packageTO3PFMOutlineTO-3PFM1. Base2. Collector3. Emitter1232SC5252Absolute Maximum Ratings (Ta = 25C)Item Sym

 8.11. Size:1019K  kexin
2sc5254.pdf

2SC525R
2SC525R

SMD Type TransistorsNPN Transistors2SC5254SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=40mA Collector Emitter Voltage VCEO=7V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.12. Size:1007K  kexin
2sc5259.pdf

2SC525R
2SC525R

SMD Type TransistorsNPN Transistors2SC5259SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=15mA1 2 Collector Emitter Voltage VCEO=7V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.13. Size:188K  inchange semiconductor
2sc5250.pdf

2SC525R
2SC525R

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5250DESCRIPTIONSilicon NPN diffused planar transistorHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeAB

 8.14. Size:216K  inchange semiconductor
2sc5252.pdf

2SC525R
2SC525R

isc Silicon NPN Power Transistor 2SC5252DESCRIPTIONHigh speed switchingHigh breakdown voltageVCBO = 1500 VMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Vo

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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