2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5287 DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

2SC5287Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose(Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit0.24.80.415.60.19.6 2.0ICBOVCBO 900 V VCB=800V 100max AIEBO VEB

isc Silicon NPN Power Transistor 2SC5287DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mo

DATA SHEETSILICON TRANSISTOR2SC5288NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 24 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

DATA SHEETSILICON TRANSISTOR2SC5289NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER AMPLIFIERThe 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWINGcordless phones (DECT, PHS, etc.). (Unit: mm)2.8+0.2 FEATURES 0.31.5+0.2 0.1 P1 = 27 dBm TYP.@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold

JMnic Product SpecificationSilicon NPN Power Transistors 2SC5280 DESCRIPTION With TO-3P(H)IS package High voltage Low saturation voltage High speed Bult-in damper diode APPLICATIONS High speed switching applications Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

isc Silicon NPN Power Transistor 2SC5280DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high medium resolutiondisplay& color TV.High speed switching applications