Справочник транзисторов. 2SC5370Y

 

Биполярный транзистор 2SC5370Y - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC5370Y

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 12 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 90 MHz

Ёмкость коллекторного перехода (Cc): 120 pf

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: TO220F_FM20

Аналоги (замена) для 2SC5370Y

 

 

2SC5370Y Datasheet (PDF)

3.1. 2sc5370.pdf Size:12K _sanken-ele

2SC5370Y

2SC5370 Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO IC=25mA

4.1. 2sc5374a-tl-e.pdf Size:408K _update

2SC5370Y
2SC5370Y

Ordering number : ENA1090A 2SC5374A RF Transistor http://onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features • High gain ⏐ ⏐2 : S21e =10.5dB typ (f=1GHz) • High cut-off frequency : fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit

4.2. 2sc5376.pdf Size:260K _toshiba

2SC5370Y
2SC5370Y

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications • Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B • High collector current: I = 400 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Un

 4.3. 2sc5376fv 071101.pdf Size:155K _toshiba

2SC5370Y
2SC5370Y

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.2±0.05 @IC = 10 mA/IB = 0.5 mA 0.8±0.05 • High Collector Current: IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25°C)

4.4. 2sc5376ct 100418.pdf Size:137K _toshiba

2SC5370Y
2SC5370Y

2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Applications 0.6±0.05 0.5±0.03 • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) 3 @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 400 mA (max) 1 2 Absolute Maximum Ratings (Ta = 25°C) 0.35±0.02

 4.5. 2sc5376f.pdf Size:145K _toshiba

2SC5370Y
2SC5370Y

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B • High Collector Current: I = 400 mA (max) C Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating

4.6. 2sc5375.pdf Size:122K _sanyo

2SC5370Y
2SC5370Y

Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifi

4.7. 2sc5374.pdf Size:122K _sanyo

2SC5370Y
2SC5370Y

Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specification

4.8. 2sc5374a.pdf Size:56K _sanyo

2SC5370Y
2SC5370Y

Ordering number : ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain : ?S21e?2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage

4.9. 2sc5379 e.pdf Size:44K _panasonic

2SC5370Y
2SC5370Y

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter

4.10. 2sc5378.pdf Size:31K _panasonic

2SC5370Y
2SC5370Y

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

4.11. 2sc5379.pdf Size:40K _panasonic

2SC5370Y
2SC5370Y

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter

4.12. 2sc5378 e.pdf Size:35K _panasonic

2SC5370Y
2SC5370Y

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

4.13. 2sc5371.pdf Size:412K _blue-rocket-elect

2SC5370Y
2SC5370Y

2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 击穿电压高,反向漏电流小,饱和压降低。 High VCEO, small ICBO and VCE(sat). 用途 / Applications 用于彩色电视机扫描调速电路及一般高频放大电路。 Color TV

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