2SC5370Y - описание и поиск аналогов

2SC5370 Silicon NPN Epitaxial Planar Transistor Application Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO

2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) 1.2 0.05 @IC = 10 mA/IB = 0.5 mA 0.8 0.05 High Collector Current IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25 C)

2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low Collector Saturation Voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating

2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit mm For Muting and Switching Applications Low collector saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current I = 400 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Un

Ordering number EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 Base 2 Emitter 3 Collector SANYO MCP

Ordering number ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain S21e 2=10.5dB typ (f=1GHz). High cut-off frequency fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-B

Ordering number EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 Base 2 Emitter 3 Collector SANYO SMCP Spec

Ordering number ENA1090A 2SC5374A RF Transistor http //onsemi.com 10V, 100mA, fT=5.2GHz, NPN Single SMCP Features High gain 2 S21e =10.5dB typ (f=1GHz) High cut-off frequency fT=5.2GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emit

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating

Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Rating

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par

Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25 C) 0.2 0.1 Par

2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV