2SC55. Аналоги и основные параметры
Наименование производителя: 2SC55
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO18
Аналоги (замена) для 2SC55
- подборⓘ биполярного транзистора по параметрам
2SC55 даташит
2sc5588.pdf
2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTER
2sc5570.pdf
2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT C
2sc5589.pdf
2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit mm HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Co
2sc5587.pdf
2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5548.pdf
2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 370 V CEO High DC current gain h = 60 (min) (I = 0.2 A) FE C Maximum Ra
2sc5548a.pdf
2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage V = 400 V CEO High DC current gain h = 40 (min) (I = 0.2 A) FE C Maximum
2sc5590.pdf
2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACT
2sc5538.pdf
Ordering number ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions 2 High gain S21e =10.5dB typ (f=1GHz). unit mm High cutoff frequency fT=5.2GHz typ. 2159 Ultrasmall, slim flat-lead package. [2SC5538] (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 Base 2
2sa2016 2sc5569.pdf
Ordering number ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sc5565.pdf
Ordering number ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2012/2SC5565] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-
2sc5536a.pdf
Ordering number ENA1092 2SC5536A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier, 2SC5536A OSC Applications Features Low-noise NF=1.8dB typ (f=150MHz). High gain S21e 2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen free compliance. Specifications Absolute Maximum Ra
2sc5539.pdf
Ordering number ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2159 High cutoff frequency fT=7.5GHz typ. [2SC5539] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.
2sc5501a.pdf
Ordering number ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=13dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Large allowable collector dissipation PC=500mW max. Specifications Abso
2sc5541.pdf
Ordering number ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=2GHz). unit mm 2 High gain S21e =10dB typ (f=2GHz). 2159 High cutoff frequency fT=13GHz typ. [2SC5541] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25
2sc5577.pdf
Ordering number ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.
2sc5537.pdf
Ordering number ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features Package Dimensions Low voltage, low current operation fT=5GHz typ. unit mm 2 (VCE=1V, IC=1mA) S21e =7dB typ (f=1GHz). 2159 NF=2.6dB typ (f=1GHz). [2SC5537] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm)
2sc5506.pdf
Ordering number EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5506] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base
2sc5551.pdf
Ordering number ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT (fT=3.5GHz typ). unit mm Large current (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SA
2sc5540.pdf
Ordering number ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions High cutoff frequency fT=10GHz typ. unit mm 2 High gain S21e =13dB typ (f=1GHz). 2159 Low noise NF=1.3dB typ (f=1GHz). [2SC5540] Small Cob Cob=0.4pF typ. Ultrasmall, slim flat-lead package. 1.
2sc5504.pdf
Ordering number ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=0.9dB typ (f=1GHz). unit mm NF=1.4dB typ (f=1.5GHz). 2161 2 High gain S21e =11dB typ (f=1GHz). [2SC5504] High cutoff frequency fT=11GHz typ. Low voltage, low current operation. 0.65 0.65 (VC
2sc5503.pdf
Ordering number ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =15dB typ (f=1GHz). 2161 High cutoff frequency fT=9.0GHz typ. [2SC5503] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter
2sa2016 2sc5569.pdf
Ordering number ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
2sa2011 2sc5564.pdf
Ordering number ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
2sc5578.pdf
Ordering number ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base
2sc5536.pdf
Ordering number ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features Package Dimensions Low noise NF=1.8dB typ (f=150MHz). unit mm 2 High gain S21e =16dB typ (f=150MHz). 2159 Ultrasmall, slim flat-lead package. [2SC5536] (1.4mm 0.8mm 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 Base 2 Emitter 3
2sa2013 2sc5566.pdf
Ordering number ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
2sc5551a.pdf
Ordering number ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT (fT=3.5GHz typ). Large current (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Un
2sc5501.pdf
Ordering number ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2161 High cutoff frequency fT=7GHz typ. [2SC5501] Large allowable collector dissipation PC=500mW max. 0.65 0.65 0.15
2sa2014 2sc5567.pdf
Ordering number ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sc5534.pdf
Ordering number ENN6258 NPN Epitaxial Planar Silicon Transistor 2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise NF=1.2dB typ (f=2GHz). unit mm 2 High gain S21e =10dB typ (f=2GHz). 2161 High cutoff frequency fT=13GHz typ. [2SC5534] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter 2
2sc5502.pdf
Ordering number ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.1dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2161 High cutoff frequency fT=8GHz typ. [2SC5502] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 Emitter 2 Coll
2sa2013 2sc5566.pdf
Ordering number ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
2sa2015 2sc5568.pdf
Ordering number ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
2sc5593.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sc5508.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2
2sc5599.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed
2sc5507.pdf
PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
ne661m04 2sc5507.pdf
PRELIMINARY DATA SHEET NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH fT = 25 GHz HIGH POWER GAIN IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRI
2sc5509.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA
2sc5574.pdf
2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (
2sc5576.pdf
2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (60 10V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B Base R1 4.5k C Collector R2 300 E Emitter
2sc5511.pdf
2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3
2sc5532.pdf
2SC5532 Transistors High-voltage Switching Transistor (400V, 5A) 2SC5532 Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A) 2) High switching speed. (tf Max. 1 s at Ic =4A) 3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7
2sc5526.pdf
2SC5526 Transistors High-speed Switching Transistor (60V, 12A) 2SC5526 External dimensions (Units mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 10.0 4.5 2) High switching speed. 2.8 3.2 (Typ. tf = 0.1 s at Ic = 6A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SA2007. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( )
2sc5575.pdf
2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf Typ. 0.18 s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 Absolute maximum ratings (Ta = 25 C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collecto
2sc5663 2sc5585.pdf
2SC5663 / 2SC5585 Datasheet Low frequency transistor (12V, 500mA) lOutline l Parameter Value SOT-723 SOT-416 VCEO 12V IC 500mA 2SC5663 2SC5585 (VMT3) (EMT3) lFeatures l 1)High current 2)Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA lApplication l LOW FREQUENCY
2sc5585 2sc5663.pdf
2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit mm) Applications For switching 2SC5585 For muting (1) (2) (3) 0.8 Features 1.6 1) High current. 2) Low VCE(sat). 0.1Min. (1) Emitter
2sc5531.pdf
2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 Features External dimensions (Units mm) 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) 13.1 (IC / IB =1A / 0.2A) 3.2 2) High breakdown voltage. VCEO=400V 3) Fast switching. 8.8 tf 1.0 s ( ) 1 Base ( ) 2 Collector (IC=0.8A) ( ) 3 Emitter 0.5Min. ROHM PSD3 EIAJ SC-83A Structure Three-lay
2sa2016 2sc5569.pdf
Ordering number EN6309D 2SA2016/2SC5569 Bipolar Transistor http //onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sc5536a.pdf
Ordering number ENA1092A 2SC5536A RF Transistor http //onsemi.com 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features Low-noise NF=1.8dB typ (f=150MHz) High gain S21e =16dB typ (f=150MHz) 2 Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings
2sc5501a-4-tr-e.pdf
Ordering number ENA1061A 2SC5501A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single MCP4 Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =13dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Large allowable collector dissipation PC=500mW max Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ra
2sc5551ae 2sc5551af.pdf
Ordering number ENA1118A 2SC5551A RF Transistor http //onsemi.com 30V, 300mA, fT=3.5GHz, NPN Single PCP Features High fT (fT=3.5GHz typ) Large current (IC=300mA) Large allowable collector dissipation (1.3W max) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Volta
2sa2013 2sc5566.pdf
Ordering number EN6307C 2SA2013/2SC5566 Bipolar Transistor http //onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
2sc5383 2sc5583.pdf
Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra
2sc5553.pdf
Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum
2sc5514.pdf
Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5515.pdf
Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5556.pdf
Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.9 0.1 2.90+0.20
2sc5580.pdf
Transistors 2SC5580 Silicon NPN epitaxial planer type Unit mm For high-frequency oscillation / switching 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.65) (0.65) packing. 1.3 0.1 2.0 0.2 10 Absolute Maximu
2sc5519.pdf
Power Transistors 2SC5519 2SC5519 2SC5519 2SC5519 2SC5519 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 For horizontal deflection output 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.
2sc5521 2sc5523 2sc5591a.pdf
Horizontal Deflection Transistor Series for TV Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe- operation, despite an absolutely minimal chip area which allows very compact package configuration. T
2sc5505.pdf
Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching TO-220D built-in Excellent package with withstand voltage 5 kV guaranteed 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol Rating Unit Collector-bas
2sc5552.pdf
Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum
2sc5513.pdf
Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5516.pdf
Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5518.pdf
Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5546.pdf
Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.0 0.2 Wide area of safe operation (ASO) 1.1 0.1 0.7 0.1 Absolute Maximum
2sc5592.pdf
Transistors 2SC5592 Silicon NPN epitaxial planer type Unit mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.9 0.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning o
2sc5584.pdf
Power Transistors 2SC5584 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra
2sc5597.pdf
Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit mm For horizontal deflection output 20.0 0.5 5.0 0.3 (3.0) 3.3 0.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 Absolute Maximum Ra
2sc5517.pdf
Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5569.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. 1 SOT-89 *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Ord
2sc5545.pdf
2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features Excellent inter modulation characteristic High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note Marking is ZS- . 2SC5545 Absolute Maximum Ratings (Ta = 25
2sc5554.pdf
2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YH- . 2SC5554 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base
2sc5555.pdf
2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is ZD- . 2SC5555 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5594.pdf
2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features High gain bandwidth product fT = 24 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note Marking is XP- . 2SC5594 Absolute Maximum
2sc5544.pdf
2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-691 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YZ- . 2SC5544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5543.pdf
2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-690 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 0.8 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is YA- . 2SC5543 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to bas
2sc5585.pdf
2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat) 0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E MARKING D H
2sc5585.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 3 2SC5585 TRANSISTOR (NPN) FEATURES High current. Low VCE(sat). VCE(sat) 250mV at IC = 200mA / IB = 10mA 1 1. BASE 2 2. EMITTER MARKING BX 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 15 V VCEO C
2sc5586 2sc5830 2sc5924.pdf
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2sc5585.pdf
2SC5585 SOT-523 Transistor(NPN) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat) 250mV at IC = 200mA / IB = 10mA MARKING BX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-B
2sc5585.pdf
2SC5585 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES SOT-523(SC-75) * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA MAXIMUM RATINGS (TA=25 Cunless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 V Collector Current Continuous IC 500 mA Collector Dissipa
2sc5548a.pdf
SMD Type Transistors NPN Transistors 2SC5548A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High speed switching High collector breakdown voltage High DC current gain 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Sym
2sc5570t7tl.pdf
2SC5570T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector
2sc5570.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC5570 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1700V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba
2sc5586.pdf
isc Silicon NPN Power Transistor 2SC5586 DESCRIPTION High Collector-Base Voltage- V = 900V(Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO
2sc5548.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548 DESCRIPTION Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high current swi
2sc5552.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5552 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc5516.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5516 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc5548a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5548A DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Complementary to 2SB1204 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and
2sc5584.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC5584 DESCRIPTION Silicon NPN triple diffusion mesa type High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc5517.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications AB
Другие транзисторы: 2SC543, 2SC544, 2SC545, 2SC546, 2SC547, 2SC547D, 2SC548, 2SC549, A733, 2SC550, 2SC551, 2SC552, 2SC553, 2SC554, 2SC555, 2SC555D, 2SC556
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