2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (T

Ordering number : ENN6913A2SA2040 / 2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69142SA2043 / 2SC5709PNP / NPN Epitaxial Planar Silicon Transistors2SA2043 / 2SC5709DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2043 / 2SC5709]Features6.5 Adoption of FBET and MBIT processes. 2.35.00.54 Large current capacitance. Low collector

Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54

DATA SHEETNPN SILICON RF TRANSISTOR2SC5704NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION6-PIN LEAD-LESS MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less mini

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

2SC5700Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1435 (Z)Rev.0Jul. 2001Features High power gain low noise figure at low power operation:|S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WB.2SC5700Absolute Maximum Ratings(Ta = 25 C)Parameter Sym

2SC5702Silicon NPN EpitaxialHigh Frequency Amplifier / OscillatorADE-208-1414 (Z)1st. EditionMar. 2001Features High gain bandwidth productfT = 8 GHz typ. High power gain and low noise figure ;PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHzOutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is ZS-.2SC5702Absolute Maximum Ratings (Ta

2SC5706NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Large current capacitanceD-PAK(TO-252)* Low collector-to-emitter saturation voltage* High-speed switching* High allowable dissipationMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBO80 V

SMD Type TransistorsNPN Transistors2SC5706TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V0.127 High-speed switching. +0.10.80-0.1max Low collector-to-emitter saturation voltage High allowable power dissipation.+ 0.11 Base2.3 0

isc Silicon NPN Power Transistor 2SC5706DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2039APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC5707DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedLow collector-to-emitter saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2040APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T