2SC58A - описание и поиск аналогов

 9.1. Size:144K  toshiba
 2sc5886a.pdf 

2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit mm DC/DC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.22 V (max) High-speed switching tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Coll

 9.2. Size:177K  toshiba
 2sc5810.pdf 

2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage V = 0.17 V (max) CE (sat) High-speed switching t = 85 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristi

 9.3. Size:180K  toshiba
 2sc5819.pdf 

2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 45 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

 9.4. Size:200K  toshiba
 2sc5859.pdf 

2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage V = 1700 V CBO Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emi

 9.5. Size:199K  toshiba
 2sc5858.pdf 

2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm HDTV, DIGITAL TV, PROJECTION TV High Voltage VCBO = 1700 V Low Saturation Voltage VCE (sat) = 1.5 V (Max) High Speed tf(2) = 0.1 s (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V C

 9.6. Size:235K  toshiba
 2sc5856.pdf 

2SC5856 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5856 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC S

 9.7. Size:194K  toshiba
 2sc5855.pdf 

2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage VCE (sat) = 3 V (max) High Speed tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING

 9.8. Size:123K  toshiba
 2sc5886.pdf 

2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation V = 0.22 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect

 9.9. Size:76K  sanyo
 2sa2099 2sc5888.pdf 

Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S

 9.10. Size:42K  sanyo
 2sc5888.pdf 

Ordering number ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter

 9.11. Size:37K  sanyo
 2sa2098 2sa2098 2sc5887.pdf 

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu

 9.12. Size:29K  sanyo
 2sc5899.pdf 

Ordering number ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1700V). 2174A High reliability(Adoption of HVP process). [2SC5899] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.

 9.13. Size:30K  sanyo
 2sc5808.pdf 

Ordering number ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Base 2 Collector 1 2 3 3 Emitter 4 Collector

 9.14. Size:32K  sanyo
 2sc5831.pdf 

 9.15. Size:85K  renesas
 2sc5850.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.16. Size:140K  renesas
 2sc5820.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.17. Size:169K  renesas
 2sc5890.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.18. Size:129K  renesas
 2sc5894.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.19. Size:116K  renesas
 2sc5828.pdf 

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.20. Size:59K  nec
 2sc5843.pdf 

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

 9.21. Size:100K  nec
 2sc5801.pdf 

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5801 50 pcs (Non reel) 8 mm wide embossed taping 2SC5801-T3 10 kpcs/re

 9.22. Size:104K  nec
 2sc5800.pdf 

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm

 9.23. Size:1603K  rohm
 2sc5876u3.pdf 

2SC5876U3 Datasheet Medium power transistor (60V, 0.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO 60V IC 500mA UMT3 lFeatures lInner circuit l l 1)High speed switching. (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and ca

 9.24. Size:1647K  rohm
 2sc5876.pdf 

2SC5876 Datasheet Medium power transistor (60V, 0.5A) lOutline l Parameter Value UMT3 VCEO 60V IC 500mA SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for

 9.25. Size:98K  rohm
 2sc5875.pdf 

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter

 9.26. Size:562K  rohm
 2sc5824.pdf 

2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline MPT3 Parameter Value VCEO 60 Base IC 3A Collector Emitter 2SC5824 Features (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.) (IC/IB=2A/200mA) 4) Lead Free/RoHS Compliant. Inner circuit Collector Applications Motor drive

 9.27. Size:99K  rohm
 2sc5825.pdf 

2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 Dimensions (Unit mm) Features 1) High speed switching. CPT3 (Tf Typ. 30ns at IC = 3A) (SC-63) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 (1) Base (2) Collector Applica

 9.28. Size:929K  rohm
 2sc5868.pdf 

Medium power transistor (60V, 0.5A) 2SC5868 Features Dimensions (Unit mm) 1) High speed switching. TSMT3 2.8 (Tf Typ. 80ns at IC = 500mA) 1.6 2) Low saturation voltage, typically (Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base (2) Emitter 0.3 0.6 Each lead has sam

 9.29. Size:931K  rohm
 2sc5865.pdf 

High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features Dimensions (Unit mm) 1) High speed switching. ( Tf Typ. 50ns at IC = 1.0A) TSMT3 1.0MAX 2) Low saturation voltage, typically. 2.9 0.85 (Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.7 3) Strong discharge power for inductive load and ( ) 3 capacitance load. 4) Low Noise. 5) Co

 9.30. Size:1470K  rohm
 2sc5866.pdf 

2SC5866 Datasheet Medium power transistor (60V, 2A) lOutline l Parameter Value TSMT3 VCEO 60V IC 2A SOT-346T SC-96 lFeatures l 1)High speed switching. lInner circuit l (tf Typ. 35ns at IC=2A) 2)Low saturation voltage, typically (Typ. 200mV at IC=1.0A, IB=100mA) 3)Storong discharge power for indu

 9.31. Size:98K  rohm
 2sc5877s.pdf 

2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf Typ. 80ns at IC = 500mA) 2) Low saturation voltage, typically 0.45 (Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements t

 9.32. Size:98K  rohm
 2sc5874s.pdf 

2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf Typ. 35ns at IC = 1.0A) 2) Low saturation voltage, typically 0.45 (Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complem

 9.33. Size:60K  rohm
 2sc5826.pdf 

2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max. 3) Strong discharge power for inductive load and 0.5 capacitance load. (1) (2) (3) (1) Emitter 2.54 2.54 4) Compleme

 9.34. Size:87K  rohm
 2sc5880.pdf 

2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit mm) Features 1) High speed switching. ATV (tf Typ. 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications

 9.35. Size:1239K  rohm
 2sc5876fra.pdf 

AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 2SA2088FRA 4) Complements the 2SA2088 0.1Min. Each lea

 9.36. Size:80K  panasonic
 2sc5839.pdf 

Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings

 9.37. Size:66K  panasonic
 2sc5829.pdf 

 9.38. Size:78K  panasonic
 2sc5809.pdf 

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For high breakdown voltage high-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in Excellent package with withstan

 9.39. Size:54K  panasonic
 2sc5895.pdf 

Power Transistors 2SC5895 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 9.40. Size:81K  panasonic
 2sc5845.pdf 

Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- 1 2 ing (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolu

 9.41. Size:79K  panasonic
 2sc5840.pdf 

Power Transistors 2SC5840 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 9.42. Size:79K  panasonic
 2sc5838.pdf 

Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit

 9.43. Size:83K  panasonic
 2sc5863.pdf 

Transistors 2SC5863 Silicon NPN epitaxial planar type Unit mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO 1 2 High transition frequency fT (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25 C 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter

 9.44. Size:70K  panasonic
 2sc5846.pdf 

Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 1.20

 9.45. Size:61K  panasonic
 2sc5896.pdf 

Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 9.46. Size:78K  panasonic
 2sc5841.pdf 

Power Transistors 2SC5841 Silicon NPN epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector-emitter saturation voltage VCE(sat) 0.

 9.47. Size:64K  panasonic
 2sc5885.pdf 

Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1

 9.48. Size:75K  panasonic
 2sc5884.pdf 

Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit mm 9.9 0.3 4.6 0.2 2.9 0.2 Features High breakdown voltage VCBO 1 500 V 3.2 0.1 Wide safe operation area Built-in dumper diode 0.76 0.06 1.25 0.1 1.45 0.15 2.6 0.1 1.2 0.15 Absolute Maximum Ratings TC = 25 C 0.7 0.1 0.75 0.1 Paramet

 9.49. Size:81K  panasonic
 2sc5813.pdf 

Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25

 9.50. Size:131K  utc
 2sc5889.pdf 

UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL

 9.51. Size:94K  hitachi
 2sc5812.pdf 

2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features High power gain, Low noise figure at low power operation S21 2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is WG . 2SC5812 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ra

 9.52. Size:87K  hitachi
 2sc5849.pdf 

2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1469 (Z) Rev. 0 Nov. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WY . 2SC5849 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

 9.53. Size:92K  hitachi
 2sc5827.pdf 

2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE 208 1464(Z) Rev.0 Nov. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WW . 2SC5827 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter volta

 9.54. Size:115K  isahaya
 2sc5882.pdf 

 9.55. Size:374K  isahaya
 2sc5804.pdf 

SMALL-SIGNAL TRANSISTOR 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2 Since it is a super-thin flat lead type package,a high-density mounting are possible.

 9.56. Size:88K  isahaya
 2sc5815.pdf 

 9.57. Size:78K  isahaya
 2sc5807.pdf 

 9.58. Size:149K  isahaya
 2sc5814.pdf 

SMALL-SIGNAL TRANSISTOR 2SC5814 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC5814 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage application. FEATURE Low collector to emitter saturation voltage. VCE(sat)=0.3V max(@IC=30mA, IB=1.5mA) Fac

 9.59. Size:145K  jmnic
 2sc5895.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION With TO-220F package High speed switching Low collector saturation voltage APPLICATIONS Power supply for audio and visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) an

 9.60. Size:146K  jmnic
 2sc5802.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC5802 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Wide area of safe operation APPLICATIONS For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum rati

 9.61. Size:1332K  sanken-ele
 2sc5586 2sc5830 2sc5924.pdf 

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 9.62. Size:986K  kexin
 2sc5824.pdf 

SMD Type Transistors NPN Transistors 2SC5824 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=60V High-speed switching. 0.42 0.1 0.46 0.1 Low saturation voltage Complements the 2SA2071 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas

 9.63. Size:209K  inchange semiconductor
 2sc5886a.pdf 

isc Silicon NPN Power Transistor 2SC5886A DESCRIPTION High switching speed time Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-Speed Switching Applications DC/DC Converter Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

 9.64. Size:180K  inchange semiconductor
 2sc5895.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5895 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments such as DC-DC converters ABSOLUTE MAXIMUM

 9.65. Size:178K  inchange semiconductor
 2sc5802.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5802 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.

 9.66. Size:178K  inchange semiconductor
 2sc5803.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications.

 9.67. Size:170K  inchange semiconductor
 2sc5890.pdf 

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5890 DESCRIPTION High Gain Bandwidth Product f = 7.8 GHz TYP. T High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier.

 9.68. Size:181K  inchange semiconductor
 2sc5885.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION High Breakdown Voltage Wide Area of Safe Operation Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 9.69. Size:188K  inchange semiconductor
 2sc5855.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5855 DESCRIPTION High speed switching High voltage Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for super high resolution Display color TV digital TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 9.70. Size:173K  inchange semiconductor
 2sc5887.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Speed Switching Low Saturation Voltage Complement to Type 2SA2098 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, lamp drivers, motor drivers.