2SC594R - описание и поиск аналогов

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector powe

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Coll

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6 2.0 x 2.0 x 0.8

2SC5946 NPN Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 fT SSS 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5949 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA2121 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco