Ordering number : ENN8091 2SC5980NPN Epitaxial Planar Silicon Transistor2SC5980High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High

2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristi

2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.3 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollecto

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO 200 VEmitter-base voltage VEBO 5 VCollector current IC 15 ABase current IB 1.5 ACollector powe

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitVCBOCollector-base voltage 200 V VCEOCollector-emitter voltage 200 V VEBOEmitter-base voltage 5 V Coll

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 32 A

Ordering number : ENN8029 2SC5999NPN Epitaxial Planar Silicon Transistors2SC5999High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers, inverters.Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type.SpecificationsAbsolute

Ordering number : ENN8035 2SC5994NPN Epitaxial Planar Silicon Transistor2SC5994High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat

Ordering number : ENN76532SC5966NPN Triple Diffused Planar Silicon Transistor2SC5966Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High-speed. unit : mm High breakdown voltage (VCBO=1700V). 2174A High reliability (Adoption of HVP process).[2SC5966] Adoption of MBIT process.5.63.416.03.12.82.0 2.1

Ordering number : ENN79882SA2125 / 2SC5964PNP / NPN Epitaxial Planar Silicon Transistors2SA2125 / 2SC5964DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8

2SC5998Silicon NPN EpitaxialHigh Frequency Medium Power AmplifierREJ03G0169-0100ZRev.1.00Apr.20.2004Features High Transition FrequencyfT = 11 GHz typ. High gain and Excellent EfficiencyMaximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHzPower Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Vol

FJAF6810AHigh Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BVCBO = 1550V High Switching Speed : tF(typ.) =0.1s For Color MonitorTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Rating UnitsVCBO Collector-Base Vo

2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base4) Complements the 2SA2113 (2) EmitterEach

2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single www.onsemi.com Features Adoption of MBIT Process Low Collector to Emitter Saturation Voltage Large Current Capacity ELECTRICAL CONNECTION High Speed Switching 2Typical Applications 1: Base Voltage Regulators 1 2 : Collector3: Emitter Relay Drivers Lamp Drivers 3 Electri

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Product NewsDelivering high breakdown voltage plus high frequency characteristics.High-fT Transistors 2SA2140/2SC5993 Overview2SA2140/2SC5993 high-fT transistors deliver a typical fTUnit : mmvalue of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power s

Power Transistors2SC5993Silicon NPN epitaxial planar typeUnit: mm4.60.2For power amplification 9.90.32.90.2For TV VM circuit 3.20.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT)1.40.2 Full-pack package which can be installed to the heat sink with one2.60.11.60.2screw.0.80.1 0.5

Power Transistors2SC5904Silicon NPN triple diffusion mesa typeFor Horizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage (VCBO 1 700 V) High-speed switching (tf

Transistors2SC5939Silicon NPN epitaxial planar typeFor high-frequency amplification/oscillation/mixing Unit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High transition frequency fT Small collector output capacitance (Common base, input open cir-cuited) Cob and reverse transfer capacitance (Common base) Crb0.23+0.05 1 20.02 SSS-Mini type package, allo

Power Transistors2SC5913Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT MonitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol

Power Transistors2SC5935Silicon NPN triple diffusion planar typeFor power amplificationUnit: mm4.60.2For TV vertical deflection output9.90.32.90.2 Features 3.20.1 Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: 5 kV Full-pack package which can be installed to the heat sink with onescrew.

Power Transistors2SC5931Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V High speed switching: tf

Power Transistors2SC5909Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V High-speed switching: tf

Power Transistors2SC5905Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT monitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V High-speed switching: tf

Power Transistors2SC5902Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 700 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit

Power Transistors2SC5912Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit

Power Transistors2SC5954Silicon NPN triple diffusion planar typeUnit: mm4.60.2For power amplification with high forward current transfer ratio 9.90.32.90.2 3.20.1 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink

2SC5946NPN Unit : mm0.33+0.05 0.10+0.050.02 0.023 fT SSS 0.23+0.05 1 20.02(0.40)(0.40)0.800.

Power Transistors2SC5926Silicon NPN triple diffusion planar typeUnit: mmFor power amplification10.00.2 5.00.11.00.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat)1.20.1 Allowing supply with the radial taping C 1.01.480.22.250.20.650.1 Absolute Maximum

SMALL-SIGNAL TRANSISTOR2SC5996FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEUnit : mmOUTLINE DRAWINGDESCRIPTIONISAHAYA 2SC5996 is a super mini package resin sealed 2.1silicon NPN epitaxial transistor for muting and switching. 0.425 0.425applicationFEATURE High Emitter to Base voltage VEBO=50VHigh Reverse hFELow ON RESIST

SMALL-SIGNAL TRANSISTOR2SC5974FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit : mmISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application0.1FEATURE0.45 High Emitter to Base voltage VEBO=50VHigh Reverse hFELow ON RESISTANCE. RON=11.27 1.

SMALL-SIGNAL TRANSISTOR2SC5974AFOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit:mmISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1FEATURE0.45 High Emitter to Base voltage VEBO=40VHigh Reverse hFELow ON RESISTANCE. R ON=11.2

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5993DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SA2140100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplificationFor TV VM circuitABSOLUTE MAXIMUM RAT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5949DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOComplement to Type 2SA2121100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsReco

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5902DESCRIPTIONHigh Breakdown VoltageBuilt-in damper diode typeHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applicati