2SC600N datasheet и подбор замены

 8.1. Size:175K  toshiba
 2sc6000.pdf 

2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation VCE (sat) = 0.18 V (max) High speed switching tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collect

 9.1. Size:302K  toshiba
 2sc6077.pdf 

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-ba

 9.2. Size:142K  toshiba
 2sc6026.pdf 

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SA2154 1 3 Absolute Maximum Ratings (Ta = 25 C) 2

 9.3. Size:180K  toshiba
 2sc6034.pdf 

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage

 9.4. Size:201K  toshiba
 2sc6075.pdf 

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160

 9.5. Size:196K  toshiba
 2sc6076.pdf 

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitt

 9.6. Size:259K  toshiba
 2sc6072.pdf 

 9.7. Size:188K  toshiba
 2sc6079.pdf 

2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VC

 9.8. Size:147K  toshiba
 2sc6026mfv.pdf 

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2

 9.9. Size:205K  toshiba
 2sc6061.pdf 

2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation VCE (sat) = 0.14 V (max) 1 High-speed switching tf = 0.2 s (typ) 3 2 Absolute Maximum Ratings (Ta = 25 C)

 9.10. Size:270K  toshiba
 2sc6078.pdf 

2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V

 9.11. Size:184K  toshiba
 2sc6052.pdf 

2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.20 V (max.) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collec

 9.12. Size:145K  toshiba
 2sc6026ct.pdf 

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit mm 0.6 0.05 High voltage and high current 0.5 0.03 VCEO = 50V, IC = 100mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SA2154CT Absolut

 9.13. Size:182K  toshiba
 2sc6042.pdf 

2SC6042 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6042 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3A) High breakdown voltage VCES = 800 V, VCEO = 375 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Colle

 9.14. Size:143K  toshiba
 2sc6067.pdf 

2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit mm Strobe Flash Applications Low Saturation Voltage VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-Base voltage V 15 V CBO Collector-Emitter voltage V 10 V CEO Emitt

 9.15. Size:192K  toshiba
 2sc6062.pdf 

2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation VCE (sat) = 0.12 V (max) High-speed switching tf = 25 ns (typ.) 3 2 Absolute Maximum Ratings (Ta

 9.16. Size:182K  toshiba
 2sc6010.pdf 

2SC6010 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6010 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.24 s (max) (IC = 0.3A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V

 9.17. Size:211K  toshiba
 2sc6033.pdf 

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit mm High-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.18 V (max) 3 2 High-speed switching tf = 38 ns (typ.

 9.18. Size:182K  toshiba
 2sc6040.pdf 

2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.2 s (max) (IC = 0.3 A) High breakdown voltage VCES = 800 V, VCEO = 410 V Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit C

 9.19. Size:181K  toshiba
 2sc6060.pdf 

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High-transition frequency fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V DC IC 1.0 A Collec

 9.20. Size:209K  toshiba
 2sc6087.pdf 

2SC6087 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6087 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V Colle

 9.21. Size:162K  toshiba
 2sc6026mfv-y 2sc6026mfv-gr.pdf 

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2

 9.22. Size:34K  sanyo
 2sc6013.pdf 

Ordering number EN8556 2SC6013 NPN Epitaxial Planar Silicon Transistor 2SC6013 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation.

 9.23. Size:50K  sanyo
 2sc6092ls.pdf 

Ordering number ENA0834 2SC6092LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6092LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb

 9.24. Size:40K  sanyo
 2sc6099.pdf 

Ordering number ENA0435 2SC6099 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6099 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 9.25. Size:51K  sanyo
 2sc6089.pdf 

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C

 9.26. Size:51K  sanyo
 2sc6090ls.pdf 

Ordering number ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6090LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symb

 9.27. Size:61K  sanyo
 2sa2169 2sc6017.pdf 

Ordering number ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching 2SA2169 / 2SC6017 Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) 2SA2169 Abs

 9.28. Size:248K  sanyo
 2sc6043.pdf 

Ordering number ENN8326 2SC6043 NPN Epitaxial Planar Silicon Transistors 2SC6043 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ra

 9.29. Size:50K  sanyo
 2sc6097.pdf 

Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

 9.30. Size:40K  sanyo
 2sc6098.pdf 

Ordering number ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor 2SC6098 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

 9.31. Size:52K  sanyo
 2sc6082.pdf 

Ordering number ENA0279 2SC6082 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- 2SC6082 plications Applications High-speed switching applications (switching regulator, driver circuit). Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed

 9.32. Size:48K  sanyo
 2sc6093.pdf 

Ordering number ENA0274 2SC6093LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6093LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Rating

 9.33. Size:36K  sanyo
 2sc6044.pdf 

Ordering number ENN8251 2SC6044 NPN Epitaxial Planar Silicon Transistors 2SC6044 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratin

 9.34. Size:58K  sanyo
 2sc6023.pdf 

Ordering number ENN8143 2SC6023 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6023 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=14dB typ (f=2GHz). Specifications Absolute Maximum Ratings at

 9.35. Size:47K  sanyo
 2sc6096.pdf 

Ordering number ENA0434 2SC6096 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6096 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 9.36. Size:54K  sanyo
 2sc6024.pdf 

Ordering number ENN8290 2SC6024 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6024 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa

 9.37. Size:142K  sanyo
 2sc6094.pdf 

 9.38. Size:425K  sanyo
 2sc6095.pdf 

2SC6095 Ordering number ENA0411A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6095 High-Voltage Switching Applications Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin

 9.39. Size:295K  onsemi
 2sc6099-e 2sc6099.pdf 

Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 9.40. Size:401K  onsemi
 2sc6099.pdf 

Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 9.41. Size:430K  onsemi
 2sa2169 2sc6017.pdf 

Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R

 9.42. Size:410K  onsemi
 2sc6097.pdf 

Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

 9.43. Size:408K  onsemi
 2sc6098.pdf 

Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

 9.44. Size:333K  onsemi
 2sc6017-e 2sc6017.pdf 

Ordering number EN8275A 2SA2169/2SC6017 Bipolar Transistor http //onsemi.com (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching ( ) 2SA2169 Specifications Absolute Maximum R

 9.45. Size:236K  onsemi
 2sc6082.pdf 

Ordering number ENA0279B 2SC6082 Bipolar Transistor http //onsemi.com ( ) 50V, 15A, Low VCE sat NPN TO-220F-3SG Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT process Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratin

 9.46. Size:198K  onsemi
 2sc6096 2sc6096-td-h.pdf 

Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

 9.47. Size:307K  onsemi
 2sc6097-e 2sc6097.pdf 

Ordering number ENA0412A 2SC6097 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

 9.48. Size:315K  onsemi
 2sc6096.pdf 

Ordering number ENA0434A 2SC6096 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

 9.49. Size:330K  onsemi
 2sc6094.pdf 

Ordering number ENA0410A 2SC6094 Bipolar Transistor http //onsemi.com ( ) 60V, 3A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio

 9.50. Size:322K  onsemi
 2sc6095.pdf 

Ordering number ENA0411A 2SC6095 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat

 9.51. Size:300K  onsemi
 2sc6098-e 2sc6098.pdf 

Ordering number ENA0413A 2SC6098 Bipolar Transistor http //onsemi.com ( ) 80V, 2.5A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

 9.52. Size:419K  panasonic
 2sc6036.pdf 

Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Unit mm Complementary to 2SA2162 0.33+0.05 0.10+0.05 -0.02 -0.02 Features 3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 -0.02 (0.40)(0.40) 0.80 0.05 Ab

 9.53. Size:89K  panasonic
 2sc6012.pdf 

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 5 Wide safe oeration area (4.0) 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings TC = 25

 9.54. Size:51K  no
 2sc605.pdf 

 9.55. Size:138K  isahaya
 2sc6046.pdf 

2SC6046 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6046 is a silicon NPN epitaxial type transistor designed with high collector current, low VCE sat . 2.8 0.65 1.5 0.65 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE sa

 9.56. Size:70K  isahaya
 2sc6053.pdf 

SMALL-SIGNAL TRANSISTOR 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE(sat). 2.5 . 1.5 0.5 0.5 FEATURE Super mini package for easy mounting High col

 9.57. Size:208K  sanken-ele
 2sc6011a.pdf 

2-1 Transistors Absolute Maximum Ratings ICBO hFE VCBO VCEO Ic Pc Conditions Conditions Part Number Applications VCB VCE Ic (V) (V) (A) (W) ( A) (V) min max (V) (A) 2SC2837 Audio, general-purpose 150 150 10 100 100 150 50 180 4 3 2SC2921 Audio, general-purpose 160 160 15 150 100 160 50 180 4 5 2SC2922 Audio, general-purpose 180 180 17 200 100 180 30 180 4 8 2SC3263 Audio, gener

 9.58. Size:170K  inchange semiconductor
 2sc6090.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6090 DESCRIPTION Collector-Base Breakdown Voltage- V = 1500V (Min) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 9.59. Size:212K  inchange semiconductor
 2sc6076.pdf 

 9.60. Size:250K  inchange semiconductor
 2sc6099.pdf 

 9.61. Size:215K  inchange semiconductor
 2sc6011a.pdf 

isc Silicon NPN Power Transistor 2SC6011A DESCRIPTION High Power Handling capacity High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA2151A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage

 9.62. Size:236K  inchange semiconductor
 2sc6017.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6017 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2169 APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.63. Size:181K  inchange semiconductor
 2sc6011.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA2151 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE

 9.64. Size:211K  inchange semiconductor
 2sc6082 .pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CB

 9.65. Size:233K  inchange semiconductor
 2sc6011 a.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A Good Linearity of hFE Complement to Type 2SA2151/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

 9.66. Size:213K  inchange semiconductor
 2sc6097.pdf 

 9.67. Size:250K  inchange semiconductor
 2sc6098.pdf 

isc Silicon NPN Power Transistor 2SC6098 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.68. Size:209K  inchange semiconductor
 2sc6082.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6082 DESCRIPTION Large current capacitance High speed switching Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CB

 9.69. Size:181K  inchange semiconductor
 2sc6093.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6093 DESCRIPTION Low saturation voltage Built-in damper diode type 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.70. Size:184K  inchange semiconductor
 2sc6011 2sc6011a.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min)-2SC6011 (BR)CEO = 200V(Min)-2SC6011A Good Linearity of h FE Complement to Type 2SA2151/A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general pu