Биполярный транзистор 2SC609
Даташит. Аналоги
Наименование производителя: 2SC609
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 75
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 40
MHz
Ёмкость коллекторного перехода (Cc): 25
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO37
- подбор биполярного транзистора по параметрам
2SC609
Datasheet (PDF)
0.1. Size:50K sanyo
2sc6092ls.pdf 
Ordering number : ENA0834 2SC6092LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6092LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb
0.2. Size:40K sanyo
2sc6099.pdf 
Ordering number : ENA0435 2SC6099SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6099High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
0.3. Size:51K sanyo
2sc6090ls.pdf 
Ordering number : ENA0996 2SC6090LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6090LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb
0.4. Size:50K sanyo
2sc6097.pdf 
Ordering number : ENA0412 2SC6097NPN Epitaxial Planar Silicon Transistor2SC6097High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
0.5. Size:40K sanyo
2sc6098.pdf 
Ordering number : ENA0413 2SC6098NPN Epitaxial Planar Silicon Transistor2SC6098High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis
0.6. Size:48K sanyo
2sc6093.pdf 
Ordering number : ENA0274 2SC6093LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6093LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating
0.7. Size:47K sanyo
2sc6096.pdf 
Ordering number : ENA0434 2SC6096SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6096High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch
0.8. Size:142K sanyo
2sc6094.pdf 
2SC6094 No. NA0410 NN N 2SC6094
0.9. Size:425K sanyo
2sc6095.pdf 
2SC6095Ordering number : ENA0411ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6095High-Voltage Switching ApplicationsApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin
0.10. Size:295K onsemi
2sc6099-e 2sc6099.pdf 
Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
0.11. Size:401K onsemi
2sc6099.pdf 
Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss
0.12. Size:410K onsemi
2sc6097.pdf 
Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
0.13. Size:408K onsemi
2sc6098.pdf 
Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
0.14. Size:198K onsemi
2sc6096 2sc6096-td-h.pdf 
Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
0.15. Size:307K onsemi
2sc6097-e 2sc6097.pdf 
Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi
0.16. Size:315K onsemi
2sc6096.pdf 
Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati
0.17. Size:330K onsemi
2sc6094.pdf 
Ordering number : ENA0410A2SC6094Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio
0.18. Size:322K onsemi
2sc6095.pdf 
Ordering number : ENA0411A2SC6095Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat
0.19. Size:300K onsemi
2sc6098-e 2sc6098.pdf 
Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis
0.20. Size:170K inchange semiconductor
2sc6090.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6090DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1500V (Min)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)
0.21. Size:250K inchange semiconductor
2sc6099.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6099DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25
0.22. Size:213K inchange semiconductor
2sc6097.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6097DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25
0.23. Size:250K inchange semiconductor
2sc6098.pdf 
isc Silicon NPN Power Transistor 2SC6098DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
0.24. Size:181K inchange semiconductor
2sc6093.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6093DESCRIPTIONLow saturation voltageBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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History: 2SD1879
| MD6003F
