2SC61 datasheet, аналоги, основные параметры
Наименование производителя: 2SC61
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 MHz
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO1
Аналоги (замена) для 2SC61
- подборⓘ биполярного транзистора по параметрам
2SC61 даташит
0.1. Size:201K toshiba
2sc6124.pdf 
2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO
0.2. Size:165K toshiba
2sc6100.pdf 
2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 120 ns (typ.) Absolute Maximum Rati
0.3. Size:219K toshiba
2sc6126.pdf 
2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic
0.4. Size:144K toshiba
2sc6134.pdf 
2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (
0.5. Size:191K toshiba
2sc6136.pdf 
2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag
0.6. Size:140K toshiba
2sc6133.pdf 
2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char
0.7. Size:146K toshiba
2sc6105.pdf 
2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit mm High voltage VCEO = 600 V (max) Low saturation voltage VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage
0.8. Size:173K toshiba
2sc6140.pdf 
2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications mm High collector voltage VCEO = 160 V Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collec
0.9. Size:150K toshiba
2sc6125.pdf 
2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector
0.10. Size:206K toshiba
2sc6142.pdf 
2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times tf = 0.15 s (typ.) High collector breakdown voltage VCES = 800
0.12. Size:132K toshiba
2sc6127.pdf 
2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit mm High Voltage Amplifier Applications High voltage VCEO = 800 V Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 5
0.13. Size:185K toshiba
2sc6139.pdf 
2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Co
0.14. Size:140K toshiba
2sc6135.pdf 
2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 1 High DC current gain hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage VCE (sat) = 0.17 V (max) 3 2 High-speed switching tf = 85 ns (typ.) Absolute Maximum Rating
0.15. Size:68K sanyo
2sc6144.pdf 
Ordering number ENA1149 2SC6144 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maxi
0.16. Size:292K sanyo
2sc6144sg.pdf 
2SC6144SG Ordering number ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi
0.17. Size:46K sanyo
2sc6118ls.pdf 
Ordering number ENA0578 2SC6118LS SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6118LS Output Applications Features High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Rating
0.20. Size:77K rohm
2sc6114.pdf 
2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3 Small signal low frequency amplifier Features 0.22 0.16 (3) 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.37 0.17 0.35 NPN silicon epitaxial 0.6 planar transistor (1) Base (2) Emitter Abbreviated symbol N (3) Collector Dimensio
0.21. Size:239K onsemi
2sc6144sg.pdf 
Ordering number ENA1800B 2SC6144SG Bipolar Transistor http //onsemi.com ( ) 50V, 10A, Low VCE sat NPN TO-220F-3FS Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.)) Specifications Ab
0.22. Size:138K isahaya
2sc6120.pdf 
2SC6120 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Unit mm OUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCE sat . 0.425 1.25 0.425 FEATURE High collector current IC MAX =600mA Low collector to emitter saturation voltage VCE
0.23. Size:227K sanken-ele
2sc6145.pdf 
2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out
0.24. Size:226K sanken-ele
2sc6145a.pdf 
2SC6145A Audio Amplification Transistor Features and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou
0.25. Size:352K chenmko
2sc6114g5gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SC6114G5GP SURFACE MOUNT Transistor VOLTAGE 50 Volts CURRENT 0.1 Ampere APPLICATION * Small signal low frequency amplifier. FEATURE * Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.) * PC= 150mW CONSTRUCTION * NPN Silicon Transistor C (3)
0.26. Size:75K chenmko
2sc6114t1gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SC6114T1GP SURFACE MOUNT Transistor VOLTAGE 50 Volts CURRENT 0.1 Ampere APPLICATION * Small signal low frequency amplifier. FEATURE * Surface mount package. (SOT-923) SOT-923 * Low cob. Cob=0.2pF(Typ.) * PC= 150mW 0.18 0.26 0.08 0.14 CONSTRUCTION (3) * NPN Silicon Transistor (1) (2) 0.11 0.19 0.36 0.41 0.35(typ) C (3) 0.565 0.635 CIRCUIT SOT-923
0.27. Size:503K cn sptech
2sc6104.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC6104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
0.28. Size:210K inchange semiconductor
2sc6144.pdf 
isc Silicon NPN Power Transistors 2SC6144 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.36V(Max.)@I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
0.29. Size:192K inchange semiconductor
2sc6145.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6145 DESCRIPTION High frequency multi emitter transistor Small package(TO-3P) High power handling capacity ,160W Complement to Type 2SA2223 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Signal transistors for audio amplifiers Audio market ABSOLUTE MAXIMUM RATIN
Другие транзисторы: 2SC604, 2SC605, 2SC606, 2SC607, 2SC608, 2SC608T, 2SC609, 2SC609T, 2SD1047, 2SC610, 2SC611, 2SC611N, 2SC612, 2SC612N, 2SC613, 2SC614, 2SC615
