Биполярный транзистор 2N2212 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N2212
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 102 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 100 °C
Граничная частота коэффициента передачи тока (ft): 0.45 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO3
2N2212 Datasheet (PDF)
2n2219 2n2219a 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N2219; 2N2219ANPN switching transistors1997 Sep 03Product specificationSupersedes data of 1997 May 07File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2219; 2N2219AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40
2n2222a 2n2219a.pdf
2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage
2n2219a 2n2222a.pdf
2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage
2n2218-2n2219-2n2221-2n2222.pdf
2N2218-2N22192N2221-2N2222HIGH-SPEED SWITCHESDESCRIPTIONThe 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planar epitaxial NPN transistors in JedecTO-39 (for 2N2218 and 2N2219) and in JedecTO-18 (for 2N2221 and 2N2222) metal cases. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range of
2n2218-a 2n2219-a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2219a to-39.pdf
MCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2N2219ACA 91311Phone: (818) 701-4933Fax: (818) 701-4939SWITCHINGFeaturesFeaturesTRANSISTOR Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar TransistorSMALL SIGNAL Marking: Type number BIPOLAR Lead Free Finish/RoHS Complian
2n2218x.pdf
2N2218XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n2218ax.pdf
2N2218AXDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
2n2218a 19a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A2N2219ATO-39Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2218A,19A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V
2n2218 2n2219.pdf
TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-B
2n2218 2n2218a 2n2218al 2n2219 2n2219a 2n2219al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL
2n2218al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL
Другие транзисторы... 2N2204 , 2N2205 , 2N2206 , 2N2207 , 2N2208 , 2N2209 , 2N2210 , 2N2211 , B772 , 2N2214 , 2N2216 , 2N2217 , 2N2217-51 , 2N2217A , 2N2218 , 2N2218A , 2N2218AQF .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050