Биполярный транзистор 2SD1034 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1034
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1250 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 300 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO237
2SD1034 Datasheet (PDF)
4.1. 2sd1033.pdf 
Size:201K _nec
4.2. 2sd1030.pdf Size:37K _panasonic
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic
4.3. 2sd1030 e.pdf Size:37K _panasonic
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 automatic
4.4. 2sd1037.pdf Size:128K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1037 DESCRIPTION Ў¤ With MT-200 package Ў¤ Excellent safe operating area Ў¤ High current capability APPLICATIONS Ў¤ For electrical supply ,DC-DC converters and low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION Ў¤ Abso
4.5. 2sd1032.pdf Size:134K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60
4.6. 2sd103.pdf Size:318K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25? Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25
4.7. 2sd1030.pdf Size:567K _kexin
SMD Type Transistors NPN Transistors 2SD1030 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
4.8. 2sd1033.pdf Size:1032K _kexin
SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High voltageVCEO=150V. ● Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Vo
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