Справочник транзисторов. 2SD1034A

 

Биполярный транзистор 2SD1034A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1034A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1250 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 300 A
   Предельная температура PN-перехода (Tj): 125 °C
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: TO237

 Аналоги (замена) для 2SD1034A

 

 

2SD1034A Datasheet (PDF)

 8.1. Size:201K  nec
2sd1033.pdf

2SD1034A
2SD1034A

 8.2. Size:37K  panasonic
2sd1030.pdf

2SD1034A
2SD1034A

Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a

 8.3. Size:37K  panasonic
2sd1030 e.pdf

2SD1034A
2SD1034A

Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a

 8.4. Size:1032K  kexin
2sd1033.pdf

2SD1034A
2SD1034A

SMD Type TransistorsNPN Transistors2SD1033TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High voltageVCEO=150V. Complimentary to 2SB7680.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo

 8.5. Size:567K  kexin
2sd1030.pdf

2SD1034A
2SD1034A

SMD Type TransistorsNPN Transistors2SD1030SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=40V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

 8.6. Size:213K  inchange semiconductor
2sd1037.pdf

2SD1034A
2SD1034A

isc Silicon NPN Power Transistor 2SD1037DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 8.7. Size:187K  inchange semiconductor
2sd1031.pdf

2SD1034A
2SD1034A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1031DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier app

 8.8. Size:211K  inchange semiconductor
2sd103.pdf

2SD1034A
2SD1034A

isc Silicon NPN Power Transistors 2SD103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CComplement to Type 2SB503Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier, power switching, DC-DCconverter and regulator appl

 8.9. Size:217K  inchange semiconductor
2sd1032.pdf

2SD1034A
2SD1034A

isc Silicon NPN Power Transistor 2SD1032DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SB812Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.10. Size:198K  inchange semiconductor
2sd1038.pdf

2SD1034A
2SD1034A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1038DESCRIPTIONHigh Current CapabilityFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications in militaryand industrial equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

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