Биполярный транзистор 2SD1061S - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1061S
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора: TO220
2SD1061S Datasheet (PDF)
2sd1061.pdf
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Ordering number:687GPNP/NPN Epitaxial Planar Silicon Transistors2SB825/2SD106150V/7A Switching ApplicationsApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2010C[2SB825/2SD1061]Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASOJEDEC : TO-220AB 1: Base( ) : 2SB825EI
2sd1061.pdf
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isc Silicon NPN Power Transistor 2SD1061DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4.0ACE(sat) CComplement to Type 2SB825Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general high curre
2sd1069.pdf
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sd1060.pdf
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Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,
2sb827 2sd1063.pdf
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Ordering number:688HPNP/NPN Epitaxial Planar Silicon Tranasistors2SB827/2SD106350V/7A Switching ApplicationsaApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2022A[2SB827/2SD1063]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO.1 : Base2 : Co
2sd1065.pdf
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Ordering number:825CPNP/NPN Epitaxial Planar Silicon Tranasistors2SB829/2SD106550V/15A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SD829/2SD1065]Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO lead
2sd1062.pdf
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Ordering number:723HPNP/NPN Epitaxial Planar Silicon Transistors2SB826/2SD106250V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB826/2SD1062]Features Low-saturation collector-to-emitter voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.
2sd1064.pdf
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Ordering number:722GPNP/NPN Epitaxial Planar Silicon Tranasistors2SB828/2SD106450V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SB828/2SD1064]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.
2sd1060.pdf
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Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete
2sd1060.pdf
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UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6
2sd1060.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m
2sd1062.pdf
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Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to
2sd1060q 2sd1060r 2sd1060s.pdf
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SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application
2sd1060.pdf
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isc Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,
2sd1063.pdf
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isc Silicon NPN Power Transistors 2SD1063DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for universal high current switching as solenoiddriving, high speed inverter and converter appl
2sd1069.pdf
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isc Silicon NPN Power Transistor 2SD1069DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd1065.pdf
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isc Silicon NPN Power Transistors 2SD1065DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 8ACE(sat) CWide Area of Safe OperationComplement to Type 2SB829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga
2sd1062.pdf
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isc Silicon NPN Power Transistors 2SD1062DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching app
2sd1064.pdf
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isc Silicon NPN Power Transistors 2SD1064DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .