Справочник транзисторов. 2SD1063R

 

Биполярный транзистор 2SD1063R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1063R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO247

 Аналоги (замена) для 2SD1063R

 

 

2SD1063R Datasheet (PDF)

 7.1. Size:102K  sanyo
2sb827 2sd1063.pdf

2SD1063R
2SD1063R

Ordering number:688HPNP/NPN Epitaxial Planar Silicon Tranasistors2SB827/2SD106350V/7A Switching ApplicationsaApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2022A[2SB827/2SD1063]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO.1 : Base2 : Co

 7.2. Size:218K  inchange semiconductor
2sd1063.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistors 2SD1063DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for universal high current switching as solenoiddriving, high speed inverter and converter appl

 8.1. Size:133K  toshiba
2sd1069.pdf

2SD1063R
2SD1063R

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:55K  sanyo
2sd1060.pdf

2SD1063R
2SD1063R

Ordering number : EN686J2SB824 / 2SD1060SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB824 / 2SD106050V / 5A Switching ApplicationsApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.Features Low collector-to-emitter saturation voltage : VCE(sat)= (--)0.4V max / IC= (--)3A,

 8.3. Size:102K  sanyo
2sd1061.pdf

2SD1063R
2SD1063R

Ordering number:687GPNP/NPN Epitaxial Planar Silicon Transistors2SB825/2SD106150V/7A Switching ApplicationsApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2010C[2SB825/2SD1061]Features Low saturation voltage : VCE(sat)=()0.4V max. Wide ASOJEDEC : TO-220AB 1: Base( ) : 2SB825EI

 8.4. Size:119K  sanyo
2sd1065.pdf

2SD1063R
2SD1063R

Ordering number:825CPNP/NPN Epitaxial Planar Silicon Tranasistors2SB829/2SD106550V/15A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SD829/2SD1065]Features Low-saturation collector-to-emitter voltage : VCE(sat) =0.5V max. Wide ASO lead

 8.5. Size:104K  sanyo
2sd1062.pdf

2SD1063R
2SD1063R

Ordering number:723HPNP/NPN Epitaxial Planar Silicon Transistors2SB826/2SD106250V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB826/2SD1062]Features Low-saturation collector-to-emitter voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

 8.6. Size:104K  sanyo
2sd1064.pdf

2SD1063R
2SD1063R

Ordering number:722GPNP/NPN Epitaxial Planar Silicon Tranasistors2SB828/2SD106450V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2022A[2SB828/2SD1064]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.

 8.7. Size:192K  onsemi
2sd1060.pdf

2SD1063R
2SD1063R

Ordering number : EN686K2SD1060Bipolar Transistorhttp://onsemi.com( )50V, 5A, Low VCE sat NPN TO-220-3LApplications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switchingFeatures Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3ASpecificationsAbsolute Maximum Ratings at Ta=25CParamete

 8.8. Size:265K  utc
2sd1060.pdf

2SD1063R
2SD1063R

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel2SD1060L-x-T60-K 2SD1060G-x-T6

 8.9. Size:158K  sony
2sd1068.pdf

2SD1063R
2SD1063R

 8.10. Size:128K  jmnic
2sd1060.pdf

2SD1063R
2SD1063R

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 m

 8.11. Size:55K  jmnic
2sd1062.pdf

2SD1063R
2SD1063R

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to

 8.12. Size:174K  cn sptech
2sd1060q 2sd1060r 2sd1060s.pdf

2SD1063R
2SD1063R

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general large-current switching application

 8.13. Size:214K  inchange semiconductor
2sd1060.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistor 2SD1060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,

 8.14. Size:210K  inchange semiconductor
2sd1069.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistor 2SD1069DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.15. Size:214K  inchange semiconductor
2sd1061.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistor 2SD1061DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4.0ACE(sat) CComplement to Type 2SB825Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general high curre

 8.16. Size:218K  inchange semiconductor
2sd1065.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistors 2SD1065DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 8ACE(sat) CWide Area of Safe OperationComplement to Type 2SB829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga

 8.17. Size:219K  inchange semiconductor
2sd1062.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistors 2SD1062DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching app

 8.18. Size:218K  inchange semiconductor
2sd1064.pdf

2SD1063R
2SD1063R

isc Silicon NPN Power Transistors 2SD1064DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchinga

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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