2SD1063R - Даташиты. Аналоги. Основные параметры

Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co

isc Silicon NPN Power Transistors 2SD1063 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for universal high current switching as solenoid driving, high speed inverter and converter appl

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Ordering number EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage VCE(sat)= (--)0.4V max / IC= (--)3A,

Ordering number 687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage VCE(sat)=( )0.4V max. Wide ASO JEDEC TO-220AB 1 Base ( ) 2SB825 EI

Ordering number 825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage VCE(sat) = 0.5V max. Wide ASO lead

Ordering number EN686K 2SD1060 Bipolar Transistor http //onsemi.com ( ) 50V, 5A, Low VCE sat NPN TO-220-3L Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features Low collector-to-emitter saturation voltage VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25 C Paramete

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T6

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switching application

isc Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters,

isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SD1061 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB825 Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general high curre

isc Silicon NPN Power Transistors 2SD1065 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 8A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a

isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app

isc Silicon NPN Power Transistors 2SD1064 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a