2SD1065S - описание и поиск аналогов

Ordering number 825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage VCE(sat) = 0.5V max. Wide ASO lead

isc Silicon NPN Power Transistors 2SD1065 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 8A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a

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Ordering number EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage VCE(sat)= (--)0.4V max / IC= (--)3A,

Ordering number 687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage VCE(sat)=( )0.4V max. Wide ASO JEDEC TO-220AB 1 Base ( ) 2SB825 EI

Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co

Ordering number EN686K 2SD1060 Bipolar Transistor http //onsemi.com ( ) 50V, 5A, Low VCE sat NPN TO-220-3L Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features Low collector-to-emitter saturation voltage VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25 C Paramete

UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T6

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switching application

isc Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters,

isc Silicon NPN Power Transistors 2SD1063 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for universal high current switching as solenoid driving, high speed inverter and converter appl

isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SD1061 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB825 Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general high curre

isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app

isc Silicon NPN Power Transistors 2SD1064 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a