2SD1113(K)Silicon NPN Triple DiffusedApplicationIgniterOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6 k 450 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 7VCollector current IC 6ACollector peak current

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1113DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

Ordering number:EN751CNPN Epitaxial Planar Silicon Darlington Transistor2SD1111Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2003B[2SD1111]5.0Features4.04.0 High DC Current Gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage (VCE(

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SD1119SOT-89 TRANSISTOR (NPN)1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage

2SD1119SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.62 B4.41.61.83. EMITTER 1.43 1.42.64.25Features 2.43.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.480.442x)0.13 B0.35 0.371.5voltage power supply. 3.0Dimensions in inches a

SMD Type TransistorsNPN Transistors2SD11191.70 0.1 Features Collector Current Capability IC=3 A Collector Emitter Voltage VCEO=25 V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

isc Silicon NPN Power Transistor 2SD1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB850Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier, ser

isc Silicon NPN Darlington Power Transistor 2SD1115DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon NPN Power Transistor 2SD1118DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 300V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1114DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid/ relay driversMotor controlElectronic au

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

isc Silicon NPN Power Transistor 2SD1110DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB849Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD111DESCRIPTIONHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA