Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

isc Silicon NPN Darlington Power Transistor 2SD1115DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Ordering number:EN751CNPN Epitaxial Planar Silicon Darlington Transistor2SD1111Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2003B[2SD1111]5.0Features4.04.0 High DC Current Gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage (VCE(

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Transistor2SD1119Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini type package, allowing downsizing of the equipment and0.4 0.08automatic insertion thr

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SD1113(K)Silicon NPN Triple DiffusedApplicationIgniterOutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 6 k 450 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 7VCollector current IC 6ACollector peak current

2SD1119SOT-89 TRANSISTOR (NPN)1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage

2SD1119SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.62 B4.41.61.83. EMITTER 1.43 1.42.64.25Features 2.43.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.480.442x)0.13 B0.35 0.371.5voltage power supply. 3.0Dimensions in inches a

SMD Type TransistorsNPN Transistors2SD11191.70 0.1 Features Collector Current Capability IC=3 A Collector Emitter Voltage VCEO=25 V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

isc Silicon NPN Power Transistor 2SD1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB850Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier, ser

isc Silicon NPN Power Transistor 2SD1118DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 300V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1114DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid/ relay driversMotor controlElectronic au

isc Silicon NPN Power Transistor 2SD1110DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB849Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1113DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min) @I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon NPN Power Transistor 2SD111DESCRIPTIONHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA