Справочник транзисторов. 2SD1130

 

Биполярный транзистор 2SD1130 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1130

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 20 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 3000

Корпус транзистора: XM20

Аналоги (замена) для 2SD1130

 

 

2SD1130 Datasheet (PDF)

4.1. 2sd1133.pdf Size:43K _hitachi

2SD1130
2SD1130

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.2. 2sd1133 2sd1134.pdf Size:32K _hitachi

2SD1130
2SD1130

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VEBO 5

 4.3. 2sd1134.pdf Size:43K _hitachi

2SD1130
2SD1130

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.4. 2sd1138.pdf Size:31K _hitachi

2SD1130
2SD1130

2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 2SD1138 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base vo

 4.5. 2sd1137.pdf Size:31K _hitachi

2SD1130
2SD1130

2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4V Collecto

4.6. 2sd1135.pdf Size:42K _hitachi

2SD1130
2SD1130

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

4.7. 2sd113.pdf Size:51K _no

2SD1130

4.8. 2sd1133.pdf Size:137K _inchange_semiconductor

2SD1130
2SD1130

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB857 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETE

4.9. 2sd1134.pdf Size:137K _inchange_semiconductor

2SD1130
2SD1130

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION ·Collector Current: IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·High Collector Power Dissipation ·Complement to Type 2SB858 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETE

4.10. 2sd113.pdf Size:238K _inchange_semiconductor

2SD1130
2SD1130

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD113 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

4.11. 2sd1138.pdf Size:96K _inchange_semiconductor

2SD1130
2SD1130

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1138 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB861 APPLICATIONS ·Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER COND

4.12. 2sd1137.pdf Size:95K _inchange_semiconductor

2SD1130
2SD1130

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1137 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB860 APPLICATIONS ·Low frequency power amplifier TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER COND

4.13. 2sd1135.pdf Size:97K _inchange_semiconductor

2SD1130
2SD1130

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1135 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB859 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co

4.14. 2sd1136.pdf Size:64K _inchange_semiconductor

2SD1130
2SD1130

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1136 DESCRIPTION · ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


2SD1130
  2SD1130
  2SD1130
 

social 

Список транзисторов

Обновления

BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

Back to Top