2SD1148 - Даташиты. Аналоги. Основные параметры

2SD1148 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SB863 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A

isc Silicon NPN Power Transistor 2SD1148 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB863 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications

2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (

Ordering number EN784E NPN Epitaxial Planar Silicon Transistor 2SD1145 High-Current Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, strobe unit mm DC-DC converters, motor drivers. 2006B [2SD1145] 6.0 Features 5.0 4.7 Low saturation voltage. Large current capacity and wide ASO. 0.5 0.6 0.5 0.5 1 Emitter 2 Collecto

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

Transistor 2SD1149 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Mini type package, allowing downsizing of the equipment and automatic insertion throug

SMD Type Transistors NPN Transistors 2SD1149 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=100V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Colle

isc Silicon NPN Darlington Power Transistor 2SD1141 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High DC Current Gain h = 500(Min)@I = 4A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1142 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 4.0V(Max.)@ I = 2.5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. AB

isc Silicon NPN Power Transistor 2SD114 DESCRIPTION High DC Current Gain- h = 25-100@I = 7.5A FE C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1143 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 5A CE(sat) C Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSO