Справочник транзисторов. 2SD1151

 

Биполярный транзистор 2SD1151 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1151

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 95 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO3

Аналоги (замена) для 2SD1151

 

 

2SD1151 Datasheet (PDF)

4.1. 2sd1159.pdf Size:77K _sanyo

2SD1151
2SD1151

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features Package Dimensions Capable of efficient drive with small internal loss due unit:mm to excellent tf. 2010C [2SD1159] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB 2.55 2.55

4.2. 2sd1153.pdf Size:83K _sanyo

2SD1151
2SD1151

Ordering number:828D PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB865/2SD1153 Drivers Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit:mm drivers. 2006A [2SB865/2SD1153] Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage. EIAJ : SC-51 B : Base ( ) : 2

 4.3. 2sd1157.pdf Size:97K _fuji

2SD1151
2SD1151

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.4. 2sd1158.pdf Size:126K _fuji

2SD1151
2SD1151

 4.5. 2sd1159.pdf Size:111K _inchange_semiconductor

2SD1151
2SD1151

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-

4.6. 2sd1157.pdf Size:235K _inchange_semiconductor

2SD1151
2SD1151

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifi

4.7. 2sd1154.pdf Size:104K _inchange_semiconductor

2SD1151
2SD1151

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emi

4.8. 2sd1158.pdf Size:116K _inchange_semiconductor

2SD1151
2SD1151

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1158 DESCRIPTION ·With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mou

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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