Биполярный транзистор 2SD1156 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1156
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO62
2SD1156 Datasheet (PDF)
2sd1153.pdf
Ordering number:828DPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB865/2SD1153Drivers ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2006A[2SB865/2SD1153]Features High DC current gain (4000 or more). Large current capacity and wide ASO. Low saturation voltage.EIAJ : SC-51 B : Base
2sd1159.pdf
Ordering number:EN837ENPN Triple Diffused Planar Silicon Transistor2SD1159TV Horizontal Deflection Output,High-Current Switching ApplicationsFeatures Package Dimensions Capable of efficient drive with small internal loss dueunit:mmto excellent tf.2010C[2SD1159]10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : TO-220AB2.55 2.
2sd1157.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1157.pdf
isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 0.5AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
2sd1159.pdf
isc Silicon NPN Power Transistor 2SD1159DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output, high-currentswitching applications.ABSOLUTE
2sd1158.pdf
isc Silicon NPN Power Transistor 2SD1158DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain-: h = 250V(Min.) @I = 1AFE CLow Collector Saturation VoltageHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatiAPPLICATIONSSwitching regulatorsDC-DC converterSolid sate relay
2sd1154.pdf
isc Silicon NPN Power Transistor 2SD1154DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output for B/W TV set.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BC239C-92
