Биполярный транзистор 2SD116 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD116
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO3
2SD116 Datasheet (PDF)
1.1. 2sd1160.pdf 
Size:219K _toshiba
2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit: mm Suitable for Motor Drive Applications • High DC current gain • Low saturation voltage: V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B • Built-in free wheel diode Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V
1.2. 2sd1163.pdf Size:40K _renesas
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (
1.3. 2sd1164.pdf Size:228K _nec
1.4. 2sd1162.pdf Size:36K _no
1.5. 2sd1169.pdf Size:37K _no
1.6. 2sd1168.pdf Size:69K _wingshing
NPN TRIPLE DIFFUSED 2SD1168 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (D
1.7. 2sd1168.pdf Size:137K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1168 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PA
1.8. 2sd1162.pdf Size:142K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min.)@IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba
1.9. 2sd1163a.pdf Size:206K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1163A DESCRIPTION ·Collector Current: I = 7A C ·Collector-Emitter Breakdown Voltage- : V = 150V(Min) (BR)CEO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE
1.10. 2sd1163.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION ·Collector Current: I = 7A C ·Collector-Emitter BreakdownVoltage- : V = 120V(Min.) (BR)CEO ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol
1.11. 2sd1163 2sd1163a.pdf Size:119K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ TV horizontal deflection output, PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL PARAMETER VCBO VCEO TOR NDU
1.12. st2sd1163a.pdf Size:476K _semtech
ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge
1.13. 2sd1164.pdf Size:1663K _kexin
SMD Type Transistors NPN Darlington Transistors 2SD1164 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features 4 ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=60V 0.127 0.80+0.1 max -0.1 1 Base + 0.1 2.3 0.60- 0.1 2 Collector +0.15 3 Emitter 4.60 -0.15 4 Collector ■ Absolute Maximum Ratings Ta = 25℃
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
