2SD1162 - описание и поиск аналогов

isc Silicon NPN Darlington Power Transistor 2SD1162 DESCRIPTION High DC Current Gain- h = 400(Min.)@I = 2A FE C High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, low speed switching industrial use. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1160 Switching Applications Unit mm Suitable for Motor Drive Applications High DC current gain Low saturation voltage V = 0.6 V (max) (I = 2A, I = 40 mA) CE (sat) C B Built-in free wheel diode Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

NPN TRIPLE DIFFUSED 2SD1168 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

ST 2SD1163A NPN Silicon Epitaxial Planar Transistor for TV horizontal deflection output applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 350 V Collector Base Voltage VCBO 150 V Collector Emitter Voltage VCEO 6 V Emitter Base Voltage VEBO 7 A Collector Current IC 10 A Collector Peak Current ICP 20 A Collector Surge

SMD Type Transistors NPN Darlington Transistors 2SD1164 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V 0.127 0.80+0.1 max -0.1 1 Base + 0.1 2.3 0.60- 0.1 2 Collector +0.15 3 Emitter 4.60 -0.15 4 Collector Absolute Maximum Ratings Ta = 25

isc Silicon NPN Power Transistor 2SD1168 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1163,2SD1163A DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS TV horizontal deflection output, PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD1

isc Silicon NPN Power Transistor 2SD1163A DESCRIPTION Collector Current I = 7A C Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1163 DESCRIPTION Collector Current I = 7A C Collector-Emitter BreakdownVoltage- V = 120V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol