Ordering number:925EPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB881/2SD1191 Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB881/2SD1191]Features High DC current gain. High current capacity and wide ASO. Low saturaion voltage.JEDEC : TO-220AB 1

isc Silicon NPN Darlington Power Transistor 2SD1191DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 3.5AFE CLow Saturation VoltageComplement to Type 2SB881Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

Ordering number:1036BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB883/2SD1193Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB883/2SD1193]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Colle

Ordering number:927EPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB885/2SD1195Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB885/2SD1195]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1 :

Ordering number:928CPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB886/2SD1196Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB886/2SD1196]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1 :

Ordering number:926CPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB882/2SD1192 Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB882/2SD1192]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1

Ordering number:1079APNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB887/2SD1197Driver ApplicationsFeatures Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB887/2SD1197]Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage.1 : Base2 : Collecto

Ordering number:1018EPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB884/2SD1194Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2010C[2SB884/2SD1194]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.JEDEC : TO-220AB 1

Ordering number:924EPNP/NPN Epitaxial Planar Silicon Darlington Tranasistors2SB880/2SD1190For Various Drivers ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulators.2010C[2SB880/2SD1190]Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage.JEDEC : TO-2

Transistor2SD1199Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.0.85M type package allowing easy automatic and manual insertion aswell as stand-alon

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

Transistor2SD1198, 2SD1198ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.1Features 1.51.5 R0.9 1.0Forward current transfer ratio hFE is designed high, which is ap-R0.9propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 40000.A shunt resistor is omitted from the driver.M type package allowin

Transistor2SD1199Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.0.85M type package allowing easy automatic and manual insertion aswell as stand-alon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION With TO-3PN package Complement to type 2SB883 High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1196 DESCRIPTION With TO-220 package High DC current gain. High current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

isc Silicon NPN Darlington Power Transistor 2SD1193DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 7.0AFE CLow Saturation VoltageComplement to Type 2SB883Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1195DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 2.5AFE CLow Saturation VoltageComplement to Type 2SB885Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers

isc Silicon NPN Darlington Power Transistor 2SD1196DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 4AFE CLow Saturation VoltageComplement to Type 2SB886Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1192DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 5.0AFE CLow Saturation VoltageComplement to Type 2SB882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1197DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageComplement to Type 2SB887Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers,

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1194DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 1.5AFE CLow Saturation VoltageComplement to Type 2SB884Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1190DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 2AFE CLow Saturation VoltageComplement to Type 2SB880Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, p