2SD1193 datasheet, аналоги, основные параметры
Наименование производителя: 2SD1193
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hFE): 2000
Корпус транзистора: TO3PB
Аналоги (замена) для 2SD1193
- подборⓘ биполярного транзистора по параметрам
2SD1193 даташит
..1. Size:134K sanyo
2sd1193.pdf 
Ordering number 1036B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB883/2SD1193 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB883/2SD1193] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Colle
..3. Size:73K jmnic
2sd1193.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION With TO-3PN package Complement to type 2SB883 High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to
..4. Size:216K inchange semiconductor
2sd1193.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1193 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 7.0A FE C Low Saturation Voltage Complement to Type 2SB883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,
8.1. Size:51K 1
2sd1198a.pdf 
Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin
8.2. Size:148K sanyo
2sd1195.pdf 
Ordering number 927E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB885/2SD1195] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1
8.3. Size:139K sanyo
2sd1196.pdf 
Ordering number 928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB886/2SD1196] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1
8.4. Size:132K sanyo
2sd1192.pdf 
Ordering number 926C PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB882/2SD1192 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB882/2SD1192] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1
8.5. Size:134K sanyo
2sd1197.pdf 
Ordering number 1079A PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB887/2SD1197 Driver Applications Features Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB887/2SD1197] Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage. 1 Base 2 Collecto
8.6. Size:137K sanyo
2sd1194.pdf 
Ordering number 1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB884/2SD1194] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1
8.7. Size:142K sanyo
2sd1191.pdf 
Ordering number 925E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB881/2SD1191 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB881/2SD1191] Features High DC current gain. High current capacity and wide ASO. Low saturaion voltage. JEDEC TO-220AB 1
8.8. Size:143K sanyo
2sd1190.pdf 
Ordering number 924E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB880/2SD1190 For Various Drivers Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulators. 2010C [2SB880/2SD1190] Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage. JEDEC TO-2
8.9. Size:43K panasonic
2sd1199 e.pdf 
Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon
8.10. Size:56K panasonic
2sd1198 e.pdf 
Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin
8.11. Size:51K panasonic
2sd1198.pdf 
Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin
8.12. Size:39K panasonic
2sd1199.pdf 
Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon
8.13. Size:110K jmnic
2sd1196.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 DESCRIPTION With TO-220 package High DC current gain. High current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit
8.14. Size:126K jmnic
2sd1197.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em
8.15. Size:210K inchange semiconductor
2sd1195.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 2.5A FE C Low Saturation Voltage Complement to Type 2SB885 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers
8.16. Size:211K inchange semiconductor
2sd1196.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1196 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 4A FE C Low Saturation Voltage Complement to Type 2SB886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,
8.17. Size:211K inchange semiconductor
2sd1192.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1192 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 5.0A FE C Low Saturation Voltage Complement to Type 2SB882 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,
8.18. Size:215K inchange semiconductor
2sd1197.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1197 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Complement to Type 2SB887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,
8.19. Size:186K inchange semiconductor
2sd1194.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1194 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 1.5A FE C Low Saturation Voltage Complement to Type 2SB884 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers
8.20. Size:210K inchange semiconductor
2sd1191.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1191 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 3.5A FE C Low Saturation Voltage Complement to Type 2SB881 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,
8.21. Size:191K inchange semiconductor
2sd1190.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1190 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage Complement to Type 2SB880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, p
Другие транзисторы: 2SD1187O, 2SD1187Y, 2SD1188, 2SD1189, 2SD119, 2SD1190, 2SD1191, 2SD1192, TIP31C, 2SD1194, 2SD1195, 2SD1196, 2SD1197, 2SD1198, 2SD1198A, 2SD1199, 2SD12
