2SD1198 - описание и поиск аналогов

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin

Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planer type darlington Unit mm For low-frequency amplification 6.9 0.1 2.5 0.1 Features 1.5 1.5 R0.9 1.0 Forward current transfer ratio hFE is designed high, which is ap- R0.9 propriate to the driver circuit of motors and printer bammer hFE = 4000 to 40000. A shunt resistor is omitted from the driver. M type package allowin

Ordering number 1036B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB883/2SD1193 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB883/2SD1193] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Colle

Ordering number 927E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB885/2SD1195 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB885/2SD1195] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1

Ordering number 928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB886/2SD1196] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1

Ordering number 926C PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB882/2SD1192 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB882/2SD1192] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1

Ordering number 1079A PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB887/2SD1197 Driver Applications Features Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB887/2SD1197] Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage. 1 Base 2 Collecto

Ordering number 1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB884/2SD1194] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. JEDEC TO-220AB 1

Ordering number 925E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB881/2SD1191 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2010C [2SB881/2SD1191] Features High DC current gain. High current capacity and wide ASO. Low saturaion voltage. JEDEC TO-220AB 1

Ordering number 924E PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors 2SB880/2SD1190 For Various Drivers Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulators. 2010C [2SB880/2SD1190] Features High DC current gain. Large current capacity and wide ASO. Low saturation voltage. JEDEC TO-2

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon

Transistor 2SD1199 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 0.85 M type package allowing easy automatic and manual insertion as well as stand-alon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1193 DESCRIPTION With TO-3PN package Complement to type 2SB883 High DC current gain High current capacity and wide ASO Low saturation voltage APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1196 DESCRIPTION With TO-220 package High DC current gain. High current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emit

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1197 DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. APPLICATIONS Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

isc Silicon NPN Darlington Power Transistor 2SD1193 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 7.0A FE C Low Saturation Voltage Complement to Type 2SB883 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1195 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 2.5A FE C Low Saturation Voltage Complement to Type 2SB885 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers

isc Silicon NPN Darlington Power Transistor 2SD1196 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 4A FE C Low Saturation Voltage Complement to Type 2SB886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1192 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 5.0A FE C Low Saturation Voltage Complement to Type 2SB882 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,

isc Silicon NPN Darlington Power Transistor 2SD1197 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Complement to Type 2SB887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1194 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1500(Min) @I = 1.5A FE C Low Saturation Voltage Complement to Type 2SB884 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers

isc Silicon NPN Darlington Power Transistor 2SD1191 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 3.5A FE C Low Saturation Voltage Complement to Type 2SB881 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers,

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1190 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage Complement to Type 2SB880 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, p