2SD1222 datasheet и подбор замены

 ..1. Size:183K  toshiba
 2sd1222.pdf 

2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1222 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 2 A) CE (sat) C Complementary to 2SB907. Maximum Ratings (T

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 2sd1228m 2sd1860.pdf 

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 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf 

 8.3. Size:188K  toshiba
 2sd1220.pdf 

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit mm Complementary to 2SB905 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Base current IB 1.0 A Ta = 25 C 1.0 Col

 8.4. Size:162K  toshiba
 2sd1224.pdf 

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha

 8.5. Size:157K  toshiba
 2sd1223.pdf 

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage VCE (sat) = 1.5 V (max) (IC = 3 A) Complementary to 2SB908. Absolute Maximum Ratings

 8.6. Size:163K  toshiba
 2sd1221.pdf 

2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage V = 4.0 V (typ.) (I = 3 A, I = 0.3 A) CE (sat) C B High power dissipation P = 20 W (Tc = 25 C) C Complementary to 2SB906 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-b

 8.7. Size:126K  sanyo
 2sd1229.pdf 

Ordering number 1028B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB912/2SD1229 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage reguraltor control. 2022A [2SB912/2SD1229] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Coll

 8.8. Size:105K  rohm
 2sd1228.pdf 

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 2sd1225.pdf 

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 2sd1226.pdf 

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 2sd1221.pdf 

SMD Type Transistors NPN Transistors 2SD1221 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 Features 5.30+0.2 0.50 +0.8 -0.2 -0.7 Low collector saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) High power dissipation PC = 20 W (Tc = 25 C) 0.127 0.80+0.1 max -0.1 Complementary to 2SB906 2.3 0.60+ 0.1 1 Base - 0.1 +0.15 4.60 -0.15 2

 8.12. Size:216K  inchange semiconductor
 2sd1229.pdf 

isc Silicon NPN Darlington Power Transistor 2SD1229 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = 5A, V = 2V FE C CE Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Complement to Type 2SB912 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers

 8.13. Size:215K  inchange semiconductor
 2sd1223.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS