2SD123 datasheet, аналоги, основные параметры
Наименование производителя: 2SD123
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO8
Аналоги (замена) для 2SD123
- подборⓘ биполярного транзистора по параметрам
2SD123 даташит
0.3. Size:151K sanyo
2sd1230.pdf 
Ordering number 1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2022A [2SB913/2SD1230] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 Base 2 Colle
0.4. Size:117K sanyo
2sd1235.pdf 
Ordering number 1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max. Large current
0.5. Size:104K sanyo
2sd1238l.pdf 
Ordering number 1798A PNP/NPN Epitaxial Planar Silicon Transistors 2SB922L/2SD1238L 80V/12A Switching Applications Applications Package Dimensions Suittable for relay drivers, high-speed inverters, unit mm converters, and other large-current switching appli- 2022A cations. [2SB922L/2SD1238L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP), 0.4
0.6. Size:142K sanyo
2sd1237l.pdf 
Ordering number 1797B PNP/NPN Epitaxial Planar Silicon Transistors 2SB921L/2SD1237L 80V/7A Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other genral large current switching 2010C applications. [2SB921L/2SD1237L] Features Low collector-to-emitter saturation voltage VCE(sat)= 0.5V (PNP),
0.7. Size:148K sanyo
2sd1236l.pdf 
Ordering number 1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max
0.8. Size:240K inchange semiconductor
2sd1237.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1237 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applications.
0.9. Size:205K inchange semiconductor
2sd1236.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD1236 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-curren
0.10. Size:217K inchange semiconductor
2sd1230.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay driver
0.11. Size:181K inchange semiconductor
2sd1239.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1239 DESCRIPTION High Current Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Power amplifiers . Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE
0.12. Size:214K inchange semiconductor
2sd1235.pdf 
isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(T =25 )
0.13. Size:218K inchange semiconductor
2sd1238l.pdf 
isc Silicon NPN Power Transistors 2SD1238L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB922L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching
0.14. Size:212K inchange semiconductor
2sd1238.pdf 
isc Silicon NPN Power Transistors 2SD1238 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching applications ABSOLUTE MAXIMUM
0.15. Size:214K inchange semiconductor
2sd1237l.pdf 
isc Silicon NPN Power Transistors 2SD1237L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Large Current Capacity Complement to Type 2SB921L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic
0.16. Size:206K inchange semiconductor
2sd1233.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION High DC Current Gain h = 1500(Min.)@ I = 4A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control
0.17. Size:214K inchange semiconductor
2sd1236l.pdf 
isc Silicon NPN Power Transistors 2SD1236L DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB920L Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters,converters, and other general high-current switching applic
Другие транзисторы: 2SD1222, 2SD1223, 2SD1224, 2SD1225M, 2SD1226M, 2SD1227M, 2SD1228M, 2SD1229, S9018, 2SD1230, 2SD1231, 2SD1232, 2SD1233, 2SD1234, 2SD1235, 2SD1235Q, 2SD1235S
