Биполярный транзистор 2SD1238 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1238
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO218
2SD1238 Datasheet (PDF)
1.1. 2sd1238l.pdf 
Size:104K _sanyo
Ordering number:1798A PNP/NPN Epitaxial Planar Silicon Transistors 2SB922L/2SD1238L 80V/12A Switching Applications Applications Package Dimensions Suittable for relay drivers, high-speed inverters, unit:mm converters, and other large-current switching appli- 2022A cations. [2SB922L/2SD1238L] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN)
1.2. 2sd1238l.pdf Size:197K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1238L DESCRIPTION ·With TO-3PN package ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SB922L APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other large- current switching applications PINNING PIN DESCRIPTION 1 Base Collec
4.1. 2sd1237l.pdf Size:142K _sanyo
Ordering number:1797B PNP/NPN Epitaxial Planar Silicon Transistors 2SB921L/2SD1237L 80V/7A Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit:mm converters, and other genral large current switching 2010C applications. [2SB921L/2SD1237L] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (N
4.2. 2sd1236.pdf Size:126K _sanyo
4.3. 2sd1235.pdf Size:117K _sanyo
Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications Package Dimensions Large current switching of relay drivers, high-speed unit:mm inverters, converters. 2010C [2SB919/2SD1235] Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current capacity
4.4. 2sd1230.pdf Size:151K _sanyo
Ordering number:1034B PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB913/2SD1230 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit:mm voltage regulator control. 2022A [2SB913/2SD1230] Features High DC current gain. High current capacity and wide ASO. Low saturation voltage. 1 : Base 2 : Collector 3
4.5. 2sd1237.pdf Size:120K _sanyo
4.6. 2sd1236l.pdf Size:148K _sanyo
Ordering number:1796B PNP/NPN Epitaxial Planar Silicon Transistors 2SB920L/2SD1236L 80V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2010C [2SB920L/2SD1236L] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. H
4.7. 2sd1237l.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1237L DESCRIPTION · ·With TO-220C package ·Complement to type 2SB921L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. PINNING PIN DESCRIPTION 1 Base
4.8. 2sd1235.pdf Size:116K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1235 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB919 ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3
4.9. 2sd1230.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1230 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applica
4.10. 2sd1233.pdf Size:231K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1233 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATI
4.11. 2sd1236l.pdf Size:121K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1236L DESCRIPTION · ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters, converters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;conne
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