Справочник транзисторов. 2SD1243

 

Биполярный транзистор 2SD1243 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1243
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO247

 Аналоги (замена) для 2SD1243

 

 

2SD1243 Datasheet (PDF)

 ..1. Size:191K  inchange semiconductor
2sd1243.pdf

2SD1243
2SD1243

isc Product Specificationisc Silicon NPN Power Transistor 2SD1243DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

 8.1. Size:83K  1
2sb926 2sd1246.pdf

2SD1243
2SD1243

 8.2. Size:83K  1
2sb927 2sd1247.pdf

2SD1243
2SD1243

 8.3. Size:85K  sanyo
2sd1246.pdf

2SD1243
2SD1243

Ordering number:1030EPNP/NPN Epitaxial Planar Silicon Transistors2SB926/2SD1246Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2003A[2SB926/2SD1246]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.JEDEC : TO-92 B

 8.4. Size:88K  sanyo
2sd1247.pdf

2SD1243
2SD1243

Ordering number:1029CPNP/NPN Epitaxial Planar Silicon Transistors2SB927/2SD1247Large-Current Driving ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers, electricalunit:mmequipment.2006A[2SB927/2SD1247]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.( ) : 2SB927 EIA

 8.5. Size:44K  panasonic
2sd1244 e.pdf

2SD1243
2SD1243

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

 8.6. Size:40K  panasonic
2sd1244.pdf

2SD1243
2SD1243

Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone

 8.7. Size:191K  inchange semiconductor
2sd1242.pdf

2SD1243
2SD1243

isc Product Specificationisc Silicon NPN Power Transistor 2SD1242DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

 8.8. Size:210K  inchange semiconductor
2sd1248.pdf

2SD1243
2SD1243

isc Silicon NPN Darlington Power Transistor 2SD1248DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAX

 8.9. Size:208K  inchange semiconductor
2sd1245.pdf

2SD1243
2SD1243

isc Silicon NPN Darlington Power Transistor 2SD1245DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and Motor controlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.10. Size:191K  inchange semiconductor
2sd1241.pdf

2SD1243
2SD1243

isc Product Specificationisc Silicon NPN Power Transistor 2SD1241DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifie

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N2128

 

 
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