Справочник транзисторов. 2SD1309

 

Биполярный транзистор 2SD1309 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1309

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 6000

Корпус транзистора: TO126

Аналоги (замена) для 2SD1309

 

 

2SD1309 Datasheet (PDF)

0.1. 2sd1309.pdf Size:63K _no

2SD1309
2SD1309

0.2. 2sd1309.pdf Size:216K _inchange_semiconductor

2SD1309
2SD1309

isc Silicon NPN Darlington Power Transistor 2SD1309DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 3AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

 8.1. r07ds0280ej 2sd1306-1.pdf Size:102K _renesas

2SD1309
2SD1309

Preliminary Datasheet R07DS0280EJ03002SD1306 (Previous: REJ03G0784-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCol

8.2. 2sd1302.pdf Size:41K _panasonic

2SD1309
2SD1309

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

 8.3. 2sd1304 e.pdf Size:55K _panasonic

2SD1309
2SD1309

Transistor2SD1304Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Zener diode built in.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25C)0.1 to 0.3Parameter S

8.4. 2sd1302 e.pdf Size:45K _panasonic

2SD1309
2SD1309

Transistor2SD1302Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor muting5.0 0.2 4.0 0.2For DC-DC converterFeaturesLow collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Colle

 8.5. 2sd1306.pdf Size:27K _hitachi

2SD1309
2SD1309

2SD1306Silicon NPN EpitaxialADE-208-1144 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifier, MutingOutlineMPAK311. Emitter2. Base23. Collector2SD1306Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 AColl

8.6. 2sd1301.pdf Size:33K _no

2SD1309

8.7. 2sd1308.pdf Size:68K _no

2SD1309
2SD1309

8.8. 2sd1306.pdf Size:328K _kexin

2SD1309

SMD Type TransistorsNPN Transistors2SD1306SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

8.9. 2sd1301.pdf Size:196K _inchange_semiconductor

2SD1309
2SD1309

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1301DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 1ACE(sat) CWide area of safe operationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned f

8.10. 2sd1307.pdf Size:186K _inchange_semiconductor

2SD1309
2SD1309

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1307DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 350V(Min)CEO(SUS)High DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverAbsolute maximum ratings(Ta=25)SYMBOL PARAMET

8.11. 2sd1308.pdf Size:215K _inchange_semiconductor

2SD1309
2SD1309

isc Silicon NPN Darlington Power Transistor 2SD1308DESCRIPTIONHigh DC Current Gain:h = 2000(Min) @ I = 2AFE CCollector-Emitter Sustaining Voltage-:V = 100V (Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-:V = 1.5V (Max) @ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio freq

8.12. 2sd130.pdf Size:181K _inchange_semiconductor

2SD1309
2SD1309

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD130DESCRIPTIONDC Current Gain -h = 15(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =

8.13. 2sd1300.pdf Size:193K _inchange_semiconductor

2SD1309
2SD1309

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1300DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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