Справочник транзисторов. 2SD1316

 

Биполярный транзистор 2SD1316 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1316
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: TO251

 Аналоги (замена) для 2SD1316

 

 

2SD1316 Datasheet (PDF)

 8.1. Size:206K  toshiba
2sd1313.pdf

2SD1316
2SD1316

 8.2. Size:170K  toshiba
2sd1314.pdf

2SD1316
2SD1316

2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1314 High Power Switching Applications Unit: mm Motor Control Applications High DC current gain: hFE = 100 (min) (V = 5 V, I = 15 A) CE C Low saturation voltage: V = 2 V (max) (I = 15 A, I = 0.4 A) CE (sat) C B High speed: t = 3 s (max) (I = 15 A) f CMaximum Ratings

 8.3. Size:186K  nec
2sd1312.pdf

2SD1316
2SD1316

 8.4. Size:121K  mospec
2sd1313.pdf

2SD1316
2SD1316

AAA

 8.5. Size:31K  no
2sd1311.pdf

2SD1316

 8.6. Size:208K  inchange semiconductor
2sd1311.pdf

2SD1316
2SD1316

isc Silicon NPN Power Transistor 2SD1311DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.7. Size:211K  inchange semiconductor
2sd1313.pdf

2SD1316
2SD1316

isc Silicon NPN Power Transistor 2SD1313DESCRIPTIONHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 350V(Min)(BR)CEOHigh Speed SwitchingLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.ABSOLUTE

 8.8. Size:187K  inchange semiconductor
2sd1314.pdf

2SD1316
2SD1316

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1314DESCRIPTIONHigh DC Current Gain:h = 100(Min) @ I = 15AFE CCollector-Emitter Sustaining Voltage-:V = 450V (Min)CEO(SUS)Fast Switching SpeedLow Collector-Emitter Saturation Voltage-:V = 2.0V (Max) @ I = 15ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable o

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N38A

 

 
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