Биполярный транзистор 2SD1320 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1320
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO251
2SD1320 Datasheet (PDF)
2sd1326.pdf
Power Transistors2SD1326Silicon NPN triple diffusion planar type DarlingtonUnit: mmFor midium speed power switching10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col- 3.1 0.1lector and base Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.21.4 0.
2sd1327.pdf
Power Transistors2SD1327Silicon NPN triple diffusion planar type DarlingtonFor midium speed power switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Incorporating a zener diode of 60V zener voltage between col-lector and base 3.1 0.1 Minimized variation in the breakdown voltage Large energy handling capability High-speed switching1.3 0.2 Full-pa
2sd1328 e.pdf
Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sd1328.pdf
Transistor2SD1328Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow collector to emitter saturation voltage VCE(sat).1Low ON resistance Ron.3High foward current transfer ratio hFE.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin
2sd1328.pdf
SMD Type TransistorsNPN Transistors2SD1328SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050