Биполярный транзистор 2SD1354GR - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1354GR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора: TO220
Аналоги (замена) для 2SD1354GR
2SD1354GR Datasheet (PDF)
2sd1350 e.pdf
Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man
2sd1350.pdf
Transistor2SD1350, 2SD1350ASilicon NPN triple diffusion planer typeFor high breakdown voltage switchingUnit: mmFeaturesHigh collector to base voltage VCBO.6.9 0.1 2.5 0.11.5High collector to emitter voltage VCEO.1.5 R0.9 1.0 R0.9Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and man
2sd1351.pdf
isc Silicon NPN Power Transistor 2SD1351DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 2A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose
2sd1357.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB997Minimum Lot-to-Lot variations for robust deviceperformance and r
2sd1355.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1355DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB995Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended fo
2sd1358.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1358DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 3VFE C CEComplement to Type 2SB998Minimum Lot-to-Lot variations for robust deviceperformance and re
2sd1352.pdf
isc Silicon NPN Power Transistor 2SD1352DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB989Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
