Справочник транзисторов. 2SD1361

 

Биполярный транзистор 2SD1361 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1361

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Ёмкость коллекторного перехода (Cc): 35 pf

Статический коэффициент передачи тока (hfe): 4000

Корпус транзистора: TO220

Аналоги (замена) для 2SD1361

 

 

2SD1361 Datasheet (PDF)

4.1. rej03g0786 2sd1368ds-1.pdf Size:110K _renesas

2SD1361
2SD1361

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sd1368.pdf Size:24K _hitachi

2SD1361
2SD1361

2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current

 4.3. 2sd1366.pdf Size:31K _hitachi

2SD1361
2SD1361

2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak

4.4. 2sd1367.pdf Size:31K _hitachi

2SD1361
2SD1361

2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current

 4.5. 2sd1368.pdf Size:400K _kexin

2SD1361
2SD1361

SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin

4.6. 2sd1366.pdf Size:883K _kexin

2SD1361
2SD1361

SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

4.7. 2sd1367.pdf Size:865K _kexin

2SD1361
2SD1361

SMD Type Transistors NPN Transistors 2SD1367 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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