2SD1365 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1365 DESCRIPTION High Collector-Base Voltage V = 800V(Min) (BR)CBO Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor control systems. Power ampli

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector

2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector

2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(

SMD Type Transistors NPN Transistors 2SD1367 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo

SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin

SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliab

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliabl

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 40W@ T = 25 C C Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 4A CE(sat) C Complement to Type 2SB992 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI