Биполярный транзистор 2SD1377K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1377K
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO220
2SD1377K Datasheet (PDF)
2sd1377.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amp
2sd1376.pdf
2SD1376(K)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1012(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base16 k 0.5 k23(Typ) (Typ)12SD1376(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base vol
2sd1370.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1370DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliab
2sd1371.pdf
isc Silicon NPN Power Transistor 2SD1371DESCRIPTIONHigh VoltageHigh Speed SwitchingHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply and electronicballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1373.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1373DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge
2sd1378.pdf
isc Silicon NPN Power Transistor 2SD1378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOLow Saturation Voltage -: V = 0.4V(Max)@ I = 0.5ACE(sat) CComplement to Type 2SB1007Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RAT
2sd1374.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1374DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge
2sd1375.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1375DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOGood Linearity of hFEHigh Speed SwitchingWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators and ge
2sd1372.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1372DESCRIPTIONHigh Collector-Base Voltage-: V = 300V(Min.)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage,high-speed,power switchingregulators,converters,inverters,motor control system.ABSOLUTE MAXIMUM RAT
2sd1376.pdf
isc Silicon NPN Darlington Power Transistor 2SD1376DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-Complement to Type 2SB1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency powe
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: PBSS305PD | 2N5075
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050