Биполярный транзистор 2SD1382 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1382
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 45
Корпус транзистора: TO126
2SD1382 Datasheet (PDF)
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf
2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a
2sd1383k.pdf
2SD1383KDatasheetHigh-gain Amplifer Transistor (32V, 0.3A)lOutlinel SOT-346 Parameter Value SC-59 VCES32VIC0.3AR 4kSMT3lFeatures lInner circuitl l1)Darlington connection for high DC current gain.2)Built-in 4k resistor between base and emitter.3)Complements the 2SB852K.lApplicationlHIGH GAIN AMPLIFIER
2sd1381f.pdf
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381FTransistorsPower Transistor (80V, 1A)2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /2SD1381F Features External dimensions (Units : mm)1) High VCEO, VCEO=80V2SD18982) High IC, IC=1A (DC)4.5+0.2-0.13) Good hFE linearity 1.5+0.21.60.1 -0.14) Low VCE (sat)5) Complements the 2SB1260 /(1) (2) (3)0.4+0.1-0.05 2SB1241 / 2SB
2sd1385 e.pdf
Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual
2sd1385.pdf
Transistor2SD1385Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).0.85M type package allowing easy automatic and manual
2sd1386.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 4AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and
2sd1380.pdf
isc Silicon NPN Power Transistor 2SD1380DESCRIPTIONHigh Collector Current -I = 2ACCollector-Emitter Breakdown Voltage-: V = 32V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SB1009Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier application
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050