2SD1426 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SD1426 Даташит. Аналоги

   Наименование производителя: 2SD1426
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Ёмкость коллекторного перехода (Cc): 95 pf
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: TO247

Аналог (замена) для 2SD1426

- подбор ⓘ биполярного транзистора по параметрам

2SD1426 Datasheet (PDF)

..1. Size:125K mospec
2sd1426.pdf pdf_icon

AAA

..2. Size:215K inchange semiconductor
2sd1426.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1426DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

8.1. Size:49K toshiba
2sd1429.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer

8.2. Size:116K toshiba
2sd1428.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.3. Size:37K panasonic
2sd1424.pdf pdf_icon

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

8.4. Size:41K panasonic
2sd1423 e.pdf pdf_icon

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

8.5. Size:41K panasonic
2sd1424 e.pdf pdf_icon

8.6. Size:37K panasonic
2sd1423.pdf pdf_icon

8.7. Size:30K hitachi
2sd1420.pdf pdf_icon

2SD1420Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1420Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

8.8. Size:30K hitachi
2sd1421.pdf pdf_icon

2SD1421Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1421Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

8.9. Size:123K mospec
2sd1427.pdf pdf_icon

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8.10. Size:881K kexin
2sd1420.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD1420SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage

8.11. Size:897K kexin
2sd1421.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD1421SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage

8.12. Size:191K inchange semiconductor
2sd1429.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1429DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.13. Size:215K inchange semiconductor
2sd1427.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1427DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collec

8.14. Size:189K inchange semiconductor
2sd1428.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1428DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX

8.15. Size:189K inchange semiconductor
2sd1425.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1425DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .