2SD1429. Аналоги и основные параметры
Наименование производителя: 2SD1429
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 95 pf
Статический коэффициент передачи тока (hFE): 8
Корпус транзистора: TO247
Аналоги (замена) для 2SD1429
- подборⓘ биполярного транзистора по параметрам
2SD1429 даташит
..1. Size:49K toshiba
2sd1429.pdf 
This Material Copyrighted By Its Respective Manufacturer
..2. Size:191K inchange semiconductor
2sd1429.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1429 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.1. Size:116K toshiba
2sd1428.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:37K panasonic
2sd1424.pdf 
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
8.3. Size:41K panasonic
2sd1423 e.pdf 
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
8.4. Size:41K panasonic
2sd1424 e.pdf 
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
8.5. Size:37K panasonic
2sd1423.pdf 
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
8.6. Size:30K hitachi
2sd1420.pdf 
2SD1420 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
8.7. Size:30K hitachi
2sd1421.pdf 
2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
8.10. Size:881K kexin
2sd1420.pdf 
SMD Type Transistors NPN Transistors 2SD1420 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage
8.11. Size:897K kexin
2sd1421.pdf 
SMD Type Transistors NPN Transistors 2SD1421 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage
8.12. Size:215K inchange semiconductor
2sd1427.pdf 
isc Silicon NPN Power Transistor 2SD1427 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
8.13. Size:215K inchange semiconductor
2sd1426.pdf 
isc Silicon NPN Power Transistor 2SD1426 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
8.14. Size:189K inchange semiconductor
2sd1428.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1428 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
8.15. Size:189K inchange semiconductor
2sd1425.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1425 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
Другие транзисторы: 2SD1422, 2SD1423, 2SD1423A, 2SD1424, 2SD1425, 2SD1426, 2SD1427, 2SD1428, D882, 2SD143, 2SD1430, 2SD1431, 2SD1432, 2SD1433, 2SD1434, 2SD1435, 2SD1435K
