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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1429DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

Transistor2SD1424Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1.27 1.27Collector to emitter voltag

Transistor2SD1423, 2SD1423ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB1030 and 2SB1030A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SD1423 30VCBO V 1 2 3base voltage 2SD1423A 60Collector

2SD1420Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1420Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

2SD1421Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SD1421Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 160 VEmitter to base voltage VEBO 5VCollector current IC 1.5 ACollector peak curren

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SMD Type TransistorsNPN Transistors2SD1420SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SD1421SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage

isc Silicon NPN Power Transistor 2SD1427DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collec

isc Silicon NPN Power Transistor 2SD1426DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1428DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1425DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAX