Справочник транзисторов. 2SD1444A

 

Биполярный транзистор 2SD1444A - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1444A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимальный постоянный ток коллектора (Ic): 7 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 120

Корпус транзистора: TO220

Аналоги (замена) для 2SD1444A

 

 

2SD1444A Datasheet (PDF)

1.1. 2sd1444 2sd1444a.pdf Size:126K _inchange_semiconductor

2SD1444A
2SD1444A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation voltage Ў¤ High speed switching Ў¤ High collector current Ў¤ Complement to type 2SB953/953A APPLICATIONS Ў¤ Power amplifiers Ў¤ Low voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1444 2SD1444A Fig.1 simpli

4.1. 2sd1446.pdf Size:63K _panasonic

2SD1444A
2SD1444A

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features ? 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1

4.2. 2sd1441.pdf Size:102K _panasonic

2SD1444A
2SD1444A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 4.3. 2sd1440.pdf Size:102K _panasonic

2SD1444A
2SD1444A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sd1441.pdf Size:75K _jmnic

2SD1444A
2SD1444A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 sim

 4.5. 2sd1441.pdf Size:118K _inchange_semiconductor

2SD1444A
2SD1444A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1441 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Built-in damper diode Ў¤ High voltage ,high reliability Ў¤ High speed switching Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplif

4.6. 2sd1445 2sd1445a.pdf Size:167K _inchange_semiconductor

2SD1444A
2SD1444A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SB948/948A Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For power amplification,power switching and low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў

4.7. 2sd1440.pdf Size:254K _inchange_semiconductor

2SD1444A
2SD1444A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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