INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1445DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 10ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOFast Switching SpeedComplement to Type 2SB948Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power ampl

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAb

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Power Transistors2SD1446Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

isc Silicon NPN Power Transistor 2SD1440DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD144DESCRIPTIONDC Current Gain -h = 40(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 500(Min) @ I = 2A, V = 2VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance

isc Silicon NPN Power Transistor 2SD1444DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 20V (Min)(BR)CEOComplement to Type 2SB956Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SD1441DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba