2SD1834TransistorsTransistors2SD1468S / 2SD1865(94S-340-D64)(94L-767-D65)311Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for re

2SD1468S 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92S Low Saturation Voltage Ideal for Voltage, High Current Drives. High DC Current Gain and High Current Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 1

2SD1468 1A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage Ideal for Low Voltage, High Current Dribes High DC Current Gain and High Current Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.

2SD1468S TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low saturation voltage, typically Vce(sat)=0.006V Ideal for voltage, high current drives, High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V

2SD1468(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 30 VCollector-Base Voltage Dimensions in inches and (millimeters)VCEO 15 VCollector-E

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1466DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEO Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 8ACE(sat) CHigh DC Current Gain: h = 200(Min) @ I = 15A, V = 3VFE C CE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance