Биполярный транзистор 2SD1493
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1493
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимальный постоянный ток коллектора (Ic): 2.5
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора:
TO218
Аналоги (замена) для 2SD1493
2SD1493
Datasheet (PDF)
..1. Size:210K inchange semiconductor
2sd1493.pdf 
isc Silicon NPN Power Transistor 2SD1493DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.1. Size:439K mcc
2sd1499-p.pdf 
MCCTMMicro Commercial Components20736 Marilla Street Chatsworth2SD1499-PMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Wide Safe Operation Area Power Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Com
8.2. Size:44K panasonic
2sd1499.pdf 
Power Transistors2SD1499Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB106310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEWide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat
8.3. Size:23K hitachi
2sd1490.pdf 
2SD1490Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1059OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD1490Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector current IC 1ACollec
8.6. Size:187K lge
2sd1499.pdf 
2SD1499(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features Extremely satisfactory linearity of the forward current transferratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with one screw. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
8.7. Size:215K inchange semiconductor
2sd1499.pdf 
isc Silicon NPN Power Transistor 2SD1499DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.8. Size:211K inchange semiconductor
2sd1494.pdf 
isc Silicon NPN Power Transistor 2SD1494DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.9. Size:186K inchange semiconductor
2sd1492.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1492DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
8.10. Size:211K inchange semiconductor
2sd1496.pdf 
isc Silicon NPN Power Transistor 2SD1496DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.11. Size:212K inchange semiconductor
2sd1497.pdf 
isc Silicon NPN Power Transistor 2SD1497DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
8.12. Size:210K inchange semiconductor
2sd1495.pdf 
isc Silicon NPN Power Transistor 2SD1495DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO
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