2SD1507M. Аналоги и основные параметры
Наименование производителя: 2SD1507M
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 typ MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hFE): 56
Корпус транзистора: ATR
Аналоги (замена) для 2SD1507M
- подборⓘ биполярного транзистора по параметрам
2SD1507M даташит
8.4. Size:33K hitachi
2sd1504.pdf 
2SD1504 Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SD1504 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector peak current ic (peak) 1.0 A Collect
8.5. Size:187K inchange semiconductor
2sd1503.pdf 
isc Product Specification isc Silicon NPN Power Transistor 2SD1503 DESCRIPTION High Collector-Base Voltage - V = 900V(Min) CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.6. Size:212K inchange semiconductor
2sd1506.pdf 
isc Silicon NPN Power Transistor 2SD1506 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
8.7. Size:210K inchange semiconductor
2sd1500.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1500 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =2
8.8. Size:213K inchange semiconductor
2sd1505.pdf 
isc Silicon NPN Power Transistor 2SD1505 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
8.9. Size:211K inchange semiconductor
2sd1509.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1509 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I =1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp
Другие транзисторы: 2SD150, 2SD1500, 2SD1501, 2SD1502, 2SD1503, 2SD1504, 2SD1505, 2SD1506, BD140, 2SD1508, 2SD1509, 2SD151, 2SD1510, 2SD1511, 2SD1512, 2SD1513, 2SD1514
