2SD1507M - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SD1507M Даташит. Аналоги

   Наименование производителя: 2SD1507M
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 90(typ) MHz
   Ёмкость коллекторного перехода (Cc): 40 pf
   Статический коэффициент передачи тока (hfe): 56
   Корпус транзистора: ATR

Аналог (замена) для 2SD1507M

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2SD1507M Datasheet (PDF)

..1. Size:65K 1
2sd1507m 2sd1864.pdf pdf_icon

8.1. Size:216K toshiba
2sd1508.pdf pdf_icon

8.2. Size:184K toshiba
2sd1509.pdf pdf_icon

8.3. Size:43K rohm
2sd1506.pdf pdf_icon

8.4. Size:33K hitachi
2sd1504.pdf pdf_icon

2SD1504Silicon NPN EpitaxialApplicationLow frequency amplifier, MutingOutlineSPAK1. Emitter122. Collector33. Base2SD1504Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector peak current ic (peak) 1.0 ACollect

8.5. Size:187K inchange semiconductor
2sd1503.pdf pdf_icon

isc Product Specificationisc Silicon NPN Power Transistor 2SD1503DESCRIPTION High Collector-Base Voltage -: V = 900V(Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier and power switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

8.6. Size:212K inchange semiconductor
2sd1506.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1506DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.7. Size:210K inchange semiconductor
2sd1500.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1500DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =2

8.8. Size:213K inchange semiconductor
2sd1505.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1505DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@I = 2ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

8.9. Size:211K inchange semiconductor
2sd1509.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1509DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I =1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp

Другие транзисторы... 2SD150 , 2SD1500 , 2SD1501 , 2SD1502 , 2SD1503 , 2SD1504 , 2SD1505 , 2SD1506 , 2SD718 , 2SD1508 , 2SD1509 , 2SD151 , 2SD1510 , 2SD1511 , 2SD1512 , 2SD1513 , 2SD1514 .