INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1510DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM R

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power

Transistor2SD1511Silicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency output amplification1.5 0.14.5 0.11.6 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE45= 4000 to 2000.A shunt resistor is omitted from the driver.0.4 0.080.4 0.04Mini Power

Transistor2SD1512Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm4.0 0.2FeaturesAllowing supply with the radial taping.High foward current transfer ratio hFE.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 V 1.27 1.272.54 0.15Emitter t

SMD Type TransistorsNPN Transistors2SD1511SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=80VC0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Vo

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1514DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1516DESCRIPTIONLow Collector Saturation VoltageGood Linearity of hFEHigh Switching SpeedHigh ICMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier ,power switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-

isc Silicon NPN Power Transistor 2SD1517DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1515DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 10A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1518DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B