Биполярный транзистор 2SD1529 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1529
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 130 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO218
2SD1529 Datasheet (PDF)
2sd1526.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request
2sd1525.pdf
2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit: mm High collector current: IC = 30 A High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol
2sd1527.pdf
2SD1527Silicon NPN Triple DiffusedApplicationHigh voltage power amplifierOutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 1000 VCollector to emitter voltage VCEO 1000 VEmitter to base voltage VEBO 5VCollector current IC 0.5 ACollector power dissipation PC 1.8 W
2sd1521.pdf
2SD1521Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base12 k 0.5 k23(Typ) (Typ)1Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current IC (peak) 3.0 ACollector
2sd1523.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1523DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 8A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
2sd1522.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1522DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 500(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
2sd1528.pdf
isc Silicon NPN Power Transistor 2SD1528DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli
2sd1525.pdf
isc Silicon NPN Darlington Power Transistor 2SD1525DESCRIPTIONHigh DC Current Gain: h = 1000(Min.)@ I = 20AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sd1524.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1524DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh DC Current Gain: h = 300(Min) @ I = 5A, V = 3VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
